SGT10T60SDM1D Datasheet and Replacement
Type Designator: SGT10T60SDM1D
Type: IGBT + Anti-Parallel Diode
Marking Code: 10T60SDM
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 49 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 35 pF
Qgⓘ - Total Gate Charge, typ: 27 nC
Package: TO252
- IGBT Cross-Reference
SGT10T60SDM1D Datasheet (PDF)
sgt10t60sdm1d.pdf

SGT10T60SDM1D 10A600V C2SGT10T60SDM1D Field StopIII 1G UPSSMPS 3E 10A600VVCE(sat)()=1.65V@IC=1
sgt10t60sdm1p7.pdf

SGT10T60SDM1P7 10A600V C2SGT10T60SDM1P7 1Field StopIIIG UPSSMPS 3E 10A600VVCE(sat)()=1.65V@I
sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf

SGT10T60SD1S/F 10A600V C2SGT10T60SD1S/F 1Field StopIIIG UPSSMPS PFC 3E 10A600VVCE(sat)()=1.65V@IC=10A
sgt10u60sdm2d.pdf

SGT10U60SDM2D 10A600V C2SGT10U60SDM2D 4 PlusField Stop IV+ 1G UPS,SMPS PFC 3E 10A600VVCE(sat)( )=1.65V@ IC=10A
Datasheet: OST50N65KEW2F , OST60N65H4EMF , OST60N65H4EWF , OST75N65HSWF , OST80N65H4EWF , OST80N65HEWF , SGT10T60SD1S , SGT10T60SD1F , FGA60N65SMD , SGT10T60SDM1P7 , SGT15T60SD1T , SGT15T60SD1F , SGT15T60SD1STR , SGT15U65SD1F , SGT15U65SD1FD , SGT20T135QR1P7 , SGT20T135QR1PN .
History: IXGM17N100A
Keywords - SGT10T60SDM1D transistor datasheet
SGT10T60SDM1D cross reference
SGT10T60SDM1D equivalent finder
SGT10T60SDM1D lookup
SGT10T60SDM1D substitution
SGT10T60SDM1D replacement
History: IXGM17N100A



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