SGT10T60SDM1D PDF and Equivalents Search

 

SGT10T60SDM1D Specs and Replacement

Type Designator: SGT10T60SDM1D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 49 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 35 pF

Package: TO252

 SGT10T60SDM1D Substitution

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SGT10T60SDM1D datasheet

 ..1. Size:316K  silan
 sgt10t60sdm1d.pdf pdf_icon

SGT10T60SDM1D

SGT10T60SDM1D 10A 600V C 2 SGT10T60SDM1D Field StopIII 1 G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@IC=1... See More ⇒

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 sgt10t60sdm1p7.pdf pdf_icon

SGT10T60SDM1D

SGT10T60SDM1P7 10A 600V C 2 SGT10T60SDM1P7 1 Field StopIII G UPS SMPS 3 E 10A 600V VCE(sat)( )=1.65V@I... See More ⇒

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 sgt10t60sd1s sgt10t60sd1str sgt10t60sd1f.pdf pdf_icon

SGT10T60SDM1D

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 sgt10u60sdm2d.pdf pdf_icon

SGT10T60SDM1D

SGT10U60SDM2D 10A 600V C 2 SGT10U60SDM2D 4 Plus Field Stop IV+ 1 G UPS,SMPS PFC 3 E 10A 600V VCE(sat)( )=1.65V@ IC=10A ... See More ⇒

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Specs: OST50N65KEW2F, OST60N65H4EMF, OST60N65H4EWF, OST75N65HSWF, OST80N65H4EWF, OST80N65HEWF, SGT10T60SD1S, SGT10T60SD1F, SGT60N60FD1P7, SGT10T60SDM1P7, SGT15T60SD1T, SGT15T60SD1F, SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD, SGT20T135QR1P7, SGT20T135QR1PN

Keywords - SGT10T60SDM1D transistor spec

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