SGT15T60SD1T PDF and Equivalents Search

 

SGT15T60SD1T Specs and Replacement

Type Designator: SGT15T60SD1T

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 109 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 30 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 41 nS

Coesⓘ - Output Capacitance, typ: 55 pF

Package: TO220

 SGT15T60SD1T Substitution

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SGT15T60SD1T datasheet

 ..1. Size:339K  silan
 sgt15t60sd1t sgt15t60sd1f sgt15t60sd1str.pdf pdf_icon

SGT15T60SD1T

SGT15T60SD1T/F/S 15A 600V C 2 SGT15T60SD1T/F/S 1 Field Stop III G UPS,SMPS PFC 1 3 3 TO-263-2L E 15A 600V VCE ... See More ⇒

 6.1. Size:321K  silan
 sgt15t60qd1f.pdf pdf_icon

SGT15T60SD1T

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 9.1. Size:331K  silan
 sgt15u65sd1f sgt15u65sd1fd.pdf pdf_icon

SGT15T60SD1T

SGT15U65SD1F(FD) 15A 650V C 2 SGT15U65SD1F(FD) 4 1 G Plus Field Stop IV+ UPS SMPS PFC 3 E 15A 650V VCE(sat)( )=1.6V@IC... See More ⇒

Specs: OST60N65H4EWF, OST75N65HSWF, OST80N65H4EWF, OST80N65HEWF, SGT10T60SD1S, SGT10T60SD1F, SGT10T60SDM1D, SGT10T60SDM1P7, IRG7IC28U, SGT15T60SD1F, SGT15T60SD1STR, SGT15U65SD1F, SGT15U65SD1FD, SGT20T135QR1P7, SGT20T135QR1PN, SGT20T135QR1PT, SGT20T60SD1F

Keywords - SGT15T60SD1T transistor spec

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