SGT40T120SDB4P7 Specs and Replacement
Type Designator: SGT40T120SDB4P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 120 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Package: TO247
SGT40T120SDB4P7 Substitution - IGBTⓘ Cross-Reference Search
SGT40T120SDB4P7 datasheet
sgt40t120sdb4p7.pdf
SGT40T120SDB4P7 40A 1200V C 2 SGT40T120SDB4P7 1 Trench Field Stop IV G UPS SMPS 3 E... See More ⇒
sgt40n60f2p7.pdf
SGT40N60F2P7 40A, 600V C 2 SGT40N60F2P7 1 Field Stop II G UPS SMPS PFC 3 E 4... See More ⇒
sgt40n60fd2pn sgt40n60fd2p7 sgt40n60fd2pt.pdf
SGT40N60FD2PN(P7)(PT) 40A, 600V C 2 SGT40N60FD2PN(P7)(PT) 1 1 2 G 3 Field Stop III TO-247-3L SMPS UPS ... See More ⇒
Specs: SGT20T60SD1FD, SGT20T60SD1PN, SGT20T60SD1T, SGT30T60SDM1P7, SGT30T60SD3PU, SGT40N60F2P7, SGT40N60FD1P7, SGT40N60FD2PT, YGW40N65F1, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, SGT75T65SDM1P4
Keywords - SGT40T120SDB4P7 transistor spec
SGT40T120SDB4P7 cross reference
SGT40T120SDB4P7 equivalent finder
SGT40T120SDB4P7 lookup
SGT40T120SDB4P7 substitution
SGT40T120SDB4P7 replacement
🌐 : EN ES РУ
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
irf540n | irf3205 mosfet | 2n3055 | irfp260n | 2n2222 datasheet | irf9540 | 2n3055 datasheet | 2sc945