SGT40T120SDB4P7 IGBT. Datasheet pdf. Equivalent
Type Designator: SGT40T120SDB4P7
Type: IGBT + Anti-Parallel Diode
Marking Code: 40T120SDB4
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 428 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 120 nS
Coesⓘ - Output Capacitance, typ: 190 pF
Qgⓘ - Total Gate Charge, typ: 270 nC
Package: TO247
SGT40T120SDB4P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search
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Datasheet: SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , SGT40N60FD2PT , SGT60N60FD1P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 , SGT75T65SDM1P4 .
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