SGT40T120SDB4P7 IGBT. Datasheet pdf. Equivalent
Type Designator: SGT40T120SDB4P7
Type: IGBT + Anti-Parallel Diode
Marking Code: 40T120SDB4
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 428
Maximum Collector-Emitter Voltage |Vce|, V: 1200
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
Maximum G-E Threshold Voltag |VGE(th)|, V: 7
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 120
Collector Capacity (Cc), typ, pF: 190
Total Gate Charge (Qg), typ, nC: 270
Package: TO247
SGT40T120SDB4P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search
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Datasheet: SGT20T60SD1FD , SGT20T60SD1PN , SGT20T60SD1T , SGT30T60SDM1P7 , SGT30T60SD3PU , SGT40N60F2P7 , SGT40N60FD1P7 , SGT40N60FD2PT , TGPF30N40P , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 , SGT75T65SDM1P4 .
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