All IGBT. SGT70N65FD1P7 Datasheet

 

SGT70N65FD1P7 Datasheet and Replacement


   Type Designator: SGT70N65FD1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 70N65FD1P7
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 321 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 171 nS
   Coesⓘ - Output Capacitance, typ: 390 pF
   Qg ⓘ - Total Gate Charge, typ: 189 nC
   Package: TO247
 

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SGT70N65FD1P7 Datasheet (PDF)

 ..1. Size:304K  silan
 sgt70n65fd1p7.pdf pdf_icon

SGT70N65FD1P7

SGT70N65FD1P7 70A650V C 2SGT70N65FD1P7 Field Stop1G UPS,SMPS PFC 3 E 70A650VVCE(sat)( )=2.3V@IC=70A

 4.1. Size:303K  silan
 sgt70n65fdm1p7.pdf pdf_icon

SGT70N65FD1P7

SGT70N65FDM1P7 70A650V C2SGT70N65FDM1P7 Field Stop1 UPS,SMPSG PFC 3E 70A650VVCE(sat)( )=2.3V@IC=70A

Datasheet: SGT40N60FD1P7 , SGT40N60FD2PT , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , IKW50N60H3 , SGT70N65FDM1P7 , SGT75T65SDM1P4 , SGT75T65SDM1P7 , SGTP30V60FD2PU , SGTP40V120F2P7 , SGTP40V120FDB2P7 , SGTP40V60FD2PU , SGTP40V60SD2PF .

Keywords - SGT70N65FD1P7 transistor datasheet

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 SGT70N65FD1P7 equivalent finder
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 SGT70N65FD1P7 substitution
 SGT70N65FD1P7 replacement

 

 
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