SGT70N65FDM1P7 Specs and Replacement
Type Designator: SGT70N65FDM1P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 321 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 140 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
tr ⓘ - Rise Time, typ: 171 nS
Coesⓘ - Output Capacitance, typ: 294 pF
Package: TO247
SGT70N65FDM1P7 Substitution - IGBTⓘ Cross-Reference Search
SGT70N65FDM1P7 datasheet
sgt70n65fdm1p7.pdf
SGT70N65FDM1P7 70A 650V C 2 SGT70N65FDM1P7 Field Stop 1 UPS,SMPS G PFC 3 E 70A 650V VCE(sat)( )=2.3V@IC=70A ... See More ⇒
Specs: SGT40N60FD2PT, SGT40T120SDB4P7, SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, IRG4PC50U, SGT75T65SDM1P4, SGT75T65SDM1P7, SGTP30V60FD2PU, SGTP40V120F2P7, SGTP40V120FDB2P7, SGTP40V60FD2PU, SGTP40V60SD2PF, SGTP40V65FDR1P7
Keywords - SGT70N65FDM1P7 transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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