All IGBT. SGT70N65FDM1P7 Datasheet

 

SGT70N65FDM1P7 Datasheet and Replacement


   Type Designator: SGT70N65FDM1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 70N65FDM1
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 321 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 140 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 171 nS
   Coesⓘ - Output Capacitance, typ: 294 pF
   Qg ⓘ - Total Gate Charge, typ: 189 nC
   Package: TO247
 

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SGT70N65FDM1P7 Datasheet (PDF)

 ..1. Size:303K  silan
 sgt70n65fdm1p7.pdf pdf_icon

SGT70N65FDM1P7

SGT70N65FDM1P7 70A650V C2SGT70N65FDM1P7 Field Stop1 UPS,SMPSG PFC 3E 70A650VVCE(sat)( )=2.3V@IC=70A

 4.1. Size:304K  silan
 sgt70n65fd1p7.pdf pdf_icon

SGT70N65FDM1P7

SGT70N65FD1P7 70A650V C 2SGT70N65FD1P7 Field Stop1G UPS,SMPS PFC 3 E 70A650VVCE(sat)( )=2.3V@IC=70A

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: MPBW30N120E

Keywords - SGT70N65FDM1P7 transistor datasheet

 SGT70N65FDM1P7 cross reference
 SGT70N65FDM1P7 equivalent finder
 SGT70N65FDM1P7 lookup
 SGT70N65FDM1P7 substitution
 SGT70N65FDM1P7 replacement

 

 
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