SGT70N65FDM1P7 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT70N65FDM1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 70N65FDM1
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 321
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 140
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 2.3
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 171
   Collector Capacity (Cc), typ, pF: 294
   Total Gate Charge (Qg), typ, nC: 189
   Package: TO247

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