SGT70N65FDM1P7 Datasheet and Replacement
Type Designator: SGT70N65FDM1P7
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 321 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 140 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 171 nS
Coesⓘ - Output Capacitance, typ: 294 pF
Package: TO247
- IGBT Cross-Reference
SGT70N65FDM1P7 Datasheet (PDF)
sgt70n65fdm1p7.pdf
SGT70N65FDM1P7 70A650V C2SGT70N65FDM1P7 Field Stop1 UPS,SMPSG PFC 3E 70A650VVCE(sat)( )=2.3V@IC=70A
sgt70n65fd1p7.pdf
SGT70N65FD1P7 70A650V C 2SGT70N65FD1P7 Field Stop1G UPS,SMPS PFC 3 E 70A650VVCE(sat)( )=2.3V@IC=70A
Datasheet: SGT40N60FD2PT , SGT40T120SDB4P7 , SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , CRG40T60AK3HD , SGT75T65SDM1P4 , SGT75T65SDM1P7 , SGTP30V60FD2PU , SGTP40V120F2P7 , SGTP40V120FDB2P7 , SGTP40V60FD2PU , SGTP40V60SD2PF , SGTP40V65FDR1P7 .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - SGT70N65FDM1P7 transistor datasheet
SGT70N65FDM1P7 cross reference
SGT70N65FDM1P7 equivalent finder
SGT70N65FDM1P7 lookup
SGT70N65FDM1P7 substitution
SGT70N65FDM1P7 replacement
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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