All IGBT. SGT75T65SDM1P7 Datasheet

 

SGT75T65SDM1P7 Datasheet and Replacement


   Type Designator: SGT75T65SDM1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 75T65SDM1
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qg ⓘ - Total Gate Charge, typ: 180 nC
   Package: TO247
 

 SGT75T65SDM1P7 substitution

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SGT75T65SDM1P7 Datasheet (PDF)

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 sgt75t65sdm1p7.pdf pdf_icon

SGT75T65SDM1P7

SGT75T65SDM1P7 75A650V C2SGT75T65SDM1P7 1Field Stop IIIG UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A

 1.1. Size:407K  silan
 sgt75t65sdm1p4.pdf pdf_icon

SGT75T65SDM1P7

SGT75T65SDM1P4 75A650V C1SGT75T65SDM1P4 4Field Stop IIIG UPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A

Datasheet: SGT40U120FD1P7 , SGT50T65SDM1P7 , SGT60N60FD1PS , SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 , SGT75T65SDM1P4 , GT30F125 , SGTP30V60FD2PU , SGTP40V120F2P7 , SGTP40V120FDB2P7 , SGTP40V60FD2PU , SGTP40V60SD2PF , SGTP40V65FDR1P7 , SGTP40V65SDB1P7 , SGTP50T120FDB4PWA .

Keywords - SGT75T65SDM1P7 transistor datasheet

 SGT75T65SDM1P7 cross reference
 SGT75T65SDM1P7 equivalent finder
 SGT75T65SDM1P7 lookup
 SGT75T65SDM1P7 substitution
 SGT75T65SDM1P7 replacement

 

 
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