SGT75T65SDM1P7 PDF and Equivalents Search

 

SGT75T65SDM1P7 Specs and Replacement

Type Designator: SGT75T65SDM1P7

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 416 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃

tr ⓘ - Rise Time, typ: 42 nS

Coesⓘ - Output Capacitance, typ: 300 pF

Package: TO247

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SGT75T65SDM1P7 datasheet

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 sgt75t65sdm1p7.pdf pdf_icon

SGT75T65SDM1P7

SGT75T65SDM1P7 75A 650V C 2 SGT75T65SDM1P7 1 Field Stop III G UPS SMPS PFC 3 E 75A 650V VCE(sat)( )=1.65V@IC=75A ... See More ⇒

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SGT75T65SDM1P7

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Specs: SGT40U120FD1P7, SGT50T65SDM1P7, SGT60N60FD1PS, SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, SGT75T65SDM1P4, GT30F131, SGTP30V60FD2PU, SGTP40V120F2P7, SGTP40V120FDB2P7, SGTP40V60FD2PU, SGTP40V60SD2PF, SGTP40V65FDR1P7, SGTP40V65SDB1P7, SGTP50T120FDB4PWA

Keywords - SGT75T65SDM1P7 transistor spec

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