SGT75T65SDM1P7 IGBT. Datasheet pdf. Equivalent

   Type Designator: SGT75T65SDM1P7
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 75T65SDM1
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 416 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 42 nS
   Coesⓘ - Output Capacitance, typ: 300 pF
   Qgⓘ - Total Gate Charge, typ: 180 nC
   Package: TO247

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