SGTP40V120FDB2P7 Datasheet and Replacement
Type Designator: SGTP40V120FDB2P7
Type: IGBT + Anti-Parallel Diode
Marking Code: P40V120FDB2
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.4 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Qg ⓘ - Total Gate Charge, typ: 130 nC
Package: TO247
SGTP40V120FDB2P7 substitution
SGTP40V120FDB2P7 Datasheet (PDF)
sgtp40v120fdb2p7.pdf

SGTP40V120FDB2P7 40A1200V C 2SGTP40V120FDB2P7 1GField Stop 5UPSSMPS PFC 3E 40A1200VVCE(sat)( )=1.9V@IC=40A
sgtp40v120f2p7.pdf

SGTP40V120F2P7 40A, 1200V C 2SGTP40V120F2P7 1GField Stop 5UPSSMPS PFC 3E 40A1200VVCE(sat)()=1.9V@IC
sgtp40v60sd2pf.pdf

SGTP40V60SD2PF 40A600V C 2SGTP40V60SD2PF 1GField Stop 5UPSSMPS PFC 3E 40A600VVCE(sat)( )=1.35V@IC=40A
sgtp40v60fd2pu.pdf

SGTP40V60FD2PU 40A600V C2 1GSGTP40V60FD2PU Field Stop 53UPSSMPS PFC E 40A600VVCE(sat)( )=1.55V@IC=40A
Datasheet: SGT60N60FD1PT , SGT60U65FD1P7 , SGT70N65FD1P7 , SGT70N65FDM1P7 , SGT75T65SDM1P4 , SGT75T65SDM1P7 , SGTP30V60FD2PU , SGTP40V120F2P7 , TGAN20N135FD , SGTP40V60FD2PU , SGTP40V60SD2PF , SGTP40V65FDR1P7 , SGTP40V65SDB1P7 , SGTP50T120FDB4PWA , SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF .
History: SGTP40V120F2P7
Keywords - SGTP40V120FDB2P7 transistor datasheet
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History: SGTP40V120F2P7



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