SGTP40V120FDB2P7 Specs and Replacement
Type Designator: SGTP40V120FDB2P7
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 41 nS
Coesⓘ - Output Capacitance, typ: 100 pF
Package: TO247
SGTP40V120FDB2P7 Substitution - IGBTⓘ Cross-Reference Search
SGTP40V120FDB2P7 datasheet
sgtp40v120fdb2p7.pdf
SGTP40V120FDB2P7 40A 1200V C 2 SGTP40V120FDB2P7 1 G Field Stop 5 UPS SMPS PFC 3 E 40A 1200V VCE(sat)( )=1.9V@IC=40A ... See More ⇒
sgtp40v120f2p7.pdf
SGTP40V120F2P7 40A, 1200V C 2 SGTP40V120F2P7 1 G Field Stop 5 UPS SMPS PFC 3 E 40A 1200V VCE(sat)( )=1.9V@IC... See More ⇒
sgtp40v60sd2pf.pdf
SGTP40V60SD2PF 40A 600V C 2 SGTP40V60SD2PF 1 G Field Stop 5 UPS SMPS PFC 3 E 40A 600V VCE(sat)( )=1.35V@IC=40A ... See More ⇒
Specs: SGT60N60FD1PT, SGT60U65FD1P7, SGT70N65FD1P7, SGT70N65FDM1P7, SGT75T65SDM1P4, SGT75T65SDM1P7, SGTP30V60FD2PU, SGTP40V120F2P7, FGH75T65UPD, SGTP40V60FD2PU, SGTP40V60SD2PF, SGTP40V65FDR1P7, SGTP40V65SDB1P7, SGTP50T120FDB4PWA, SGTP50V60FD2PF, SGTP50V60FD2PU, SGTP50V60SD2PF
Keywords - SGTP40V120FDB2P7 transistor spec
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History: NCE25TD120BT
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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