SGTP50T120FDB4PWA PDF and Equivalents Search

 

SGTP50T120FDB4PWA Specs and Replacement

Type Designator: SGTP50T120FDB4PWA

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 600 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2 V @25℃

tr ⓘ - Rise Time, typ: 32 nS

Coesⓘ - Output Capacitance, typ: 259 pF

Package: TO247PN

 SGTP50T120FDB4PWA Substitution

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SGTP50T120FDB4PWA datasheet

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SGTP50T120FDB4PWA

SGTP50T120FDB4PWA 50A 1200V C 2 SGTP50T120FDB4PWA 1 G Field Stop IV UPS SMPS PFC 3 E 50A 1200V VCE(sat)( )=2.0V@IC=50A ... See More ⇒

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 sgtp50v65sdb1p7.pdf pdf_icon

SGTP50T120FDB4PWA

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 sgtp50v60fd2pu.pdf pdf_icon

SGTP50T120FDB4PWA

SGTP50V60FD2PU 50A 600V C 2 SGTP50V60FD2PU 1 G Field Stop 5 UPS SMPS PFC 3 E 50A 600V VCE(sat)( )=1.65V@IC=50A ... See More ⇒

 8.3. Size:480K  silan
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SGTP50T120FDB4PWA

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Specs: SGT75T65SDM1P7 , SGTP30V60FD2PU , SGTP40V120F2P7 , SGTP40V120FDB2P7 , SGTP40V60FD2PU , SGTP40V60SD2PF , SGTP40V65FDR1P7 , SGTP40V65SDB1P7 , IRG4PC50W , SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF , SGTP50V65FD2PU , SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , SGTP50V65UFCR3P7 .

History: STGP20V60F | NCE25GD135T

Keywords - SGTP50T120FDB4PWA transistor spec

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