All IGBT. SGTP50V65FD2PU Datasheet

 

SGTP50V65FD2PU Datasheet and Replacement


   Type Designator: SGTP50V65FD2PU
   Type: IGBT + Anti-Parallel Diode
   Marking Code: P50V65FD2PU
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 273 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 69 pF
   Qg ⓘ - Total Gate Charge, typ: 131 nC
   Package: TO247N
 

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SGTP50V65FD2PU Datasheet (PDF)

 ..1. Size:532K  silan
 sgtp50v65fd2pu.pdf pdf_icon

SGTP50V65FD2PU

SGTP50V65FD2PU 50A650V C 2SGTP50V65FD2PU 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A

 3.1. Size:480K  silan
 sgtp50v65fdb1p7.pdf pdf_icon

SGTP50V65FD2PU

SGTP50V65FDB1P7 50A650V C 2SGTP50V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A

 5.1. Size:472K  silan
 sgtp50v65sdb1p7.pdf pdf_icon

SGTP50V65FD2PU

SGTP50V65SDB1P7 50A650V C 2SGTP50V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.45V@IC=50A

 5.2. Size:410K  silan
 sgtp50v65ufcr3p7.pdf pdf_icon

SGTP50V65FD2PU

SGTP50V65UFCR3P7 50A650V C 2SGTP50V65UFCR3P7 1GField Stop 5OBC PFC 3E 50A650VVCE(sat)( )=1.60V@IC=5

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Keywords - SGTP50V65FD2PU transistor datasheet

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