All IGBT. SGTP50V65FDB1P7 Datasheet

 

SGTP50V65FDB1P7 Datasheet and Replacement


   Type Designator: SGTP50V65FDB1P7
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 273 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 26 nS
   Coesⓘ - Output Capacitance, typ: 87 pF
   Package: TO247
      - IGBT Cross-Reference

 

SGTP50V65FDB1P7 Datasheet (PDF)

 0.1. Size:480K  silan
 sgtp50v65fdb1p7.pdf pdf_icon

SGTP50V65FDB1P7

SGTP50V65FDB1P7 50A650V C 2SGTP50V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A

 3.1. Size:532K  silan
 sgtp50v65fd2pu.pdf pdf_icon

SGTP50V65FDB1P7

SGTP50V65FD2PU 50A650V C 2SGTP50V65FD2PU 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A

 5.1. Size:472K  silan
 sgtp50v65sdb1p7.pdf pdf_icon

SGTP50V65FDB1P7

SGTP50V65SDB1P7 50A650V C 2SGTP50V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.45V@IC=50A

 5.2. Size:410K  silan
 sgtp50v65ufcr3p7.pdf pdf_icon

SGTP50V65FDB1P7

SGTP50V65UFCR3P7 50A650V C 2SGTP50V65UFCR3P7 1GField Stop 5OBC PFC 3E 50A650VVCE(sat)( )=1.60V@IC=5

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History: 1MBI50FE-060 | F4-50R12KS4_B11 | NGTB20N135IHR | BM63763S-VC | BLG15T65FUL-P | MG100HF12MRC1 | FD400R33KF2C

Keywords - SGTP50V65FDB1P7 transistor datasheet

 SGTP50V65FDB1P7 cross reference
 SGTP50V65FDB1P7 equivalent finder
 SGTP50V65FDB1P7 lookup
 SGTP50V65FDB1P7 substitution
 SGTP50V65FDB1P7 replacement

 

 
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