SGTP50V65FDB1P7 Datasheet and Replacement
Type Designator: SGTP50V65FDB1P7
Type: IGBT + Anti-Parallel Diode
Marking Code: P50V65FDB1
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 273 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 87 pF
Qg ⓘ - Total Gate Charge, typ: 129 nC
Package: TO247
SGTP50V65FDB1P7 substitution
SGTP50V65FDB1P7 Datasheet (PDF)
sgtp50v65fdb1p7.pdf
SGTP50V65FDB1P7 50A650V C 2SGTP50V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A
sgtp50v65fd2pu.pdf
SGTP50V65FD2PU 50A650V C 2SGTP50V65FD2PU 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.65V@IC=50A
sgtp50v65sdb1p7.pdf
SGTP50V65SDB1P7 50A650V C 2SGTP50V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 50A650VVCE(sat)( )=1.45V@IC=50A
sgtp50v65ufcr3p7.pdf
SGTP50V65UFCR3P7 50A650V C 2SGTP50V65UFCR3P7 1GField Stop 5OBC PFC 3E 50A650VVCE(sat)( )=1.60V@IC=5
Datasheet: SGTP40V60SD2PF , SGTP40V65FDR1P7 , SGTP40V65SDB1P7 , SGTP50T120FDB4PWA , SGTP50V60FD2PF , SGTP50V60FD2PU , SGTP50V60SD2PF , SGTP50V65FD2PU , IRG4PC50UD , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B .
History: IXGH20N140C3H1
Keywords - SGTP50V65FDB1P7 transistor datasheet
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SGTP50V65FDB1P7 replacement
History: IXGH20N140C3H1
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