SGTP50V65SDB1P7 Datasheet. Specs and Replacement

Type Designator: SGTP50V65SDB1P7  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 273 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 100 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃

tr ⓘ - Rise Time, typ: 27 nS

Coesⓘ - Output Capacitance, typ: 87 pF

Package: TO247

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SGTP50V65SDB1P7 datasheet

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SGTP50V65SDB1P7

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SGTP50V65SDB1P7

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SGTP50V65SDB1P7

SGTP50V65UFCR3P7 50A 650V C 2 SGTP50V65UFCR3P7 1 G Field Stop 5 OBC PFC 3 E 50A 650V VCE(sat)( )=1.60V@IC=5... See More ⇒

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Specs: SGTP40V65FDR1P7, SGTP40V65SDB1P7, SGTP50T120FDB4PWA, SGTP50V60FD2PF, SGTP50V60FD2PU, SGTP50V60SD2PF, SGTP50V65FD2PU, SGTP50V65FDB1P7, NGTB75N65FL2, SGTP50V65UF1P7, SGTP50V65UFCR3P7, SGTP5T60SD1DTR, SGTP5T60SD1STR, SGTP75V120FDB2PW, SGTP75V120FDB2PW4, SGTP75V65FDB1P4B, SGTP75V65FDB1P7

Keywords - SGTP50V65SDB1P7 transistor spec

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