SGTP75V120FDB2PW Datasheet. Specs and Replacement

Type Designator: SGTP75V120FDB2PW  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 833 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃

tr ⓘ - Rise Time, typ: 38 nS

Coesⓘ - Output Capacitance, typ: 175 pF

Package: TO247P

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SGTP75V120FDB2PW datasheet

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SGTP75V120FDB2PW

SGTP75V120FDB2PW4 75A 1200V C 1 SGTP75V120FDB2PW4 4 Field Stop 5 G UPS SMPS PFC 3 2 E 75A 1200V VCE(sat)( )=1.9V@IC=... See More ⇒

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SGTP75V120FDB2PW

SGTP75V120FDB2PW 75A 1200V C 2 SGTP75V120FDB2PW 1 G Field Stop 5 UPS SMPS PFC 3 E 75A 1200V VCE(sat)( )=1.9V@IC=75A ... See More ⇒

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Specs: SGTP50V60SD2PF, SGTP50V65FD2PU, SGTP50V65FDB1P7, SGTP50V65SDB1P7, SGTP50V65UF1P7, SGTP50V65UFCR3P7, SGTP5T60SD1DTR, SGTP5T60SD1STR, SGT40N60FD2PT, SGTP75V120FDB2PW4, SGTP75V65FDB1P4B, SGTP75V65FDB1P7, SGTP75V65SDB1P7, SGTP75V65SDS1P7, SGTQ160V65SDB1APW, SGTQ160V65SDB1APWA, SGTQ200V75SDB1PWA

Keywords - SGTP75V120FDB2PW transistor spec

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