SGTP75V65FDB1P4B Datasheet and Replacement
Type Designator: SGTP75V65FDB1P4B
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 375 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 150 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 44 nS
Coesⓘ - Output Capacitance, typ: 132 pF
Package: TO247B-4L
- IGBT Cross-Reference
SGTP75V65FDB1P4B Datasheet (PDF)
sgtp75v65fdb1p7.pdf
SGTP75V65FDB1P7 75A650V C 2SGTP75V65FDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.65V@IC=75A
sgtp75v65fdb1p4b.pdf
SGTP75V65FDB1P4B 75A650V C1SGTP75V65FDB1P4B Field Stop 5 4GUPSSMPS PFC 3 2E 75A650VVCE(sat)( )=1.65V@IC=75A
sgtp75v65sds1p7.pdf
SGTP75V65SDS1P7 75A650V C 2SGTP75V65SDS1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
sgtp75v65sdb1p7.pdf
SGTP75V65SDB1P7 75A650V C 2SGTP75V65SDB1P7 1GField Stop 5UPSSMPS PFC 3E 75A650VVCE(sat)( )=1.42V@IC=75A
Datasheet: SGTP50V65FDB1P7 , SGTP50V65SDB1P7 , SGTP50V65UF1P7 , SGTP50V65UFCR3P7 , SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , XNF15N60T , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - SGTP75V65FDB1P4B transistor datasheet
SGTP75V65FDB1P4B cross reference
SGTP75V65FDB1P4B equivalent finder
SGTP75V65FDB1P4B lookup
SGTP75V65FDB1P4B substitution
SGTP75V65FDB1P4B replacement
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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