SGTQ160V65SDB1APW IGBT. Datasheet pdf. Equivalent

   Type Designator: SGTQ160V65SDB1APW
   Type: IGBT + Anti-Parallel Diode
   Marking Code: Q160V65SDB1A
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 498 pF
   Qgⓘ - Total Gate Charge, typ: 750 nC
   Package: TO247P

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