SGTQ160V65SDB1APW Datasheet and Replacement
Type Designator: SGTQ160V65SDB1APW
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 882 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 400 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 498 pF
Package: TO247P
- IGBT Cross-Reference
SGTQ160V65SDB1APW Datasheet (PDF)
sgtq160v65sdb1apw sgtq160v65sdb1apwa.pdf
SGTQ160V65SDB1APW(PWA) 160A650V C 2SGTQ160V65SDB1APW(PWA)1GField Stop 5 Motor DrivesDC/AC converter 3E VCE(sat)=1.4
Datasheet: SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , IRG4PF50W , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF .
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
Keywords - SGTQ160V65SDB1APW transistor datasheet
SGTQ160V65SDB1APW cross reference
SGTQ160V65SDB1APW equivalent finder
SGTQ160V65SDB1APW lookup
SGTQ160V65SDB1APW substitution
SGTQ160V65SDB1APW replacement
History: AOTF15B65MQ1 | 2MBI1000VXB-170E-50
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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