All IGBT. SGTQ160V65SDB1APW Datasheet

 

SGTQ160V65SDB1APW Datasheet and Replacement


   Type Designator: SGTQ160V65SDB1APW
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 498 pF
   Package: TO247P
 

 SGTQ160V65SDB1APW substitution

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SGTQ160V65SDB1APW Datasheet (PDF)

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SGTQ160V65SDB1APW

SGTQ160V65SDB1APW(PWA) 160A650V C 2SGTQ160V65SDB1APW(PWA)1GField Stop 5 Motor DrivesDC/AC converter 3E VCE(sat)=1.4

Datasheet: SGTP5T60SD1DTR , SGTP5T60SD1STR , SGTP75V120FDB2PW , SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , IKW40N65WR5 , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF .

History: MSG80N350FH

Keywords - SGTQ160V65SDB1APW transistor datasheet

 SGTQ160V65SDB1APW cross reference
 SGTQ160V65SDB1APW equivalent finder
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 SGTQ160V65SDB1APW substitution
 SGTQ160V65SDB1APW replacement

 

 
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