All IGBT. SGTQ160V65SDB1APW Datasheet

 

SGTQ160V65SDB1APW IGBT. Datasheet pdf. Equivalent


   Type Designator: SGTQ160V65SDB1APW
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 882
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 400
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.42
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 62
   Collector Capacity (Cc), typ, pF: 498
   Package: TO247P

 SGTQ160V65SDB1APW Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ160V65SDB1APW Datasheet (PDF)

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 sgtq160v65sdb1apw sgtq160v65sdb1apwa.pdf

SGTQ160V65SDB1APW SGTQ160V65SDB1APW

SGTQ160V65SDB1APW(PWA) 160A650V C 2SGTQ160V65SDB1APW(PWA)1GField Stop 5 Motor DrivesDC/AC converter 3E VCE(sat)=1.4

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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