SGTQ160V65SDB1APW IGBT. Datasheet pdf. Equivalent

   Type Designator: SGTQ160V65SDB1APW
   Type: IGBT + Anti-Parallel Diode
   Marking Code: Q160V65SDB1A
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 882
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 400
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.42
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 62
   Collector Capacity (Cc), typ, pF: 498
   Total Gate Charge (Qg), typ, nC: 750
   Package: TO247P

SGTQ160V65SDB1APW Transistor Equivalent Substitute - IGBT Cross-Reference Search