All IGBT. SGTQ160V65SDB1APWA Datasheet

 

SGTQ160V65SDB1APWA Datasheet and Replacement


   Type Designator: SGTQ160V65SDB1APWA
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 882 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 400 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.42 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 498 pF
   Package: TO247PN
      - IGBT Cross-Reference

 

SGTQ160V65SDB1APWA Datasheet (PDF)

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SGTQ160V65SDB1APWA

SGTQ160V65SDB1APW(PWA) 160A650V C 2SGTQ160V65SDB1APW(PWA)1GField Stop 5 Motor DrivesDC/AC converter 3E VCE(sat)=1.4

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: MMG75J120U6HN | 2SH29

Keywords - SGTQ160V65SDB1APWA transistor datasheet

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