All IGBT. SGTQ160V65SDB1APWA Datasheet

 

SGTQ160V65SDB1APWA IGBT. Datasheet pdf. Equivalent


   Type Designator: SGTQ160V65SDB1APWA
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 882
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 400
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.42
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 62
   Collector Capacity (Cc), typ, pF: 498
   Package: TO247PN

 SGTQ160V65SDB1APWA Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ160V65SDB1APWA Datasheet (PDF)

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 sgtq160v65sdb1apw sgtq160v65sdb1apwa.pdf

SGTQ160V65SDB1APWA SGTQ160V65SDB1APWA

SGTQ160V65SDB1APW(PWA) 160A650V C 2SGTQ160V65SDB1APW(PWA)1GField Stop 5 Motor DrivesDC/AC converter 3E VCE(sat)=1.4

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
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