All IGBT. SGTQ200V75SDB1PWD Datasheet

 

SGTQ200V75SDB1PWD IGBT. Datasheet pdf. Equivalent


   Type Designator: SGTQ200V75SDB1PWD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: Q200V75PWD
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 1000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.8 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 112 nS
   Coesⓘ - Output Capacitance, typ: 498 pF
   Qgⓘ - Total Gate Charge, typ: 750 nC
   Package: TO247PD

 SGTQ200V75SDB1PWD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ200V75SDB1PWD Datasheet (PDF)

 0.1. Size:501K  silan
 sgtq200v75sdb1pwa.pdf

SGTQ200V75SDB1PWD SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWA 200A750V C 2SGTQ200V75SDB1PWA 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.42V(

 0.2. Size:568K  silan
 sgtq200v75sdb1pwd.pdf

SGTQ200V75SDB1PWD SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWD 200A750V C 2SGTQ200V75SDB1PWD 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.50V( )@IC

Datasheet: SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , IRG7S313U , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F .

 

 
Back to Top