All IGBT. SGTQ200V75SDB1PWD Datasheet

 

SGTQ200V75SDB1PWD IGBT. Datasheet pdf. Equivalent


   Type Designator: SGTQ200V75SDB1PWD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: Q200V75PWD
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 1000
   Maximum Collector-Emitter Voltage |Vce|, V: 750
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 200
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 112
   Collector Capacity (Cc), typ, pF: 498
   Total Gate Charge (Qg), typ, nC: 750
   Package: TO247PD

 SGTQ200V75SDB1PWD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ200V75SDB1PWD Datasheet (PDF)

 0.1. Size:501K  silan
 sgtq200v75sdb1pwa.pdf

SGTQ200V75SDB1PWD SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWA 200A750V C 2SGTQ200V75SDB1PWA 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.42V(

 0.2. Size:568K  silan
 sgtq200v75sdb1pwd.pdf

SGTQ200V75SDB1PWD SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWD 200A750V C 2SGTQ200V75SDB1PWD 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.50V( )@IC

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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