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SGTQ200V75SDB1PWD Specs and Replacement


   Type Designator: SGTQ200V75SDB1PWD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 112 nS
   Coesⓘ - Output Capacitance, typ: 498 pF
   Package: TO247PD
 

 SGTQ200V75SDB1PWD Substitution

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SGTQ200V75SDB1PWD specs

 0.1. Size:501K  silan
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SGTQ200V75SDB1PWD

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SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWD 200A 750V C 2 SGTQ200V75SDB1PWD 1 G Field Stop 5 Motor Drives DC/AC converter 3 E VCE(sat)=1.50V( )@IC... See More ⇒

Specs: SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , BT60T60ANFK , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F .

Keywords - SGTQ200V75SDB1PWD transistor spec

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