SGTQ200V75SDB1PWD Datasheet. Specs and Replacement

Type Designator: SGTQ200V75SDB1PWD  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 1000 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 200 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃

tr ⓘ - Rise Time, typ: 112 nS

Coesⓘ - Output Capacitance, typ: 498 pF

Package: TO247PD

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SGTQ200V75SDB1PWD datasheet

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SGTQ200V75SDB1PWD

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SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWD 200A 750V C 2 SGTQ200V75SDB1PWD 1 G Field Stop 5 Motor Drives DC/AC converter 3 E VCE(sat)=1.50V( )@IC... See More ⇒

Specs: SGTP75V120FDB2PW4, SGTP75V65FDB1P4B, SGTP75V65FDB1P7, SGTP75V65SDB1P7, SGTP75V65SDS1P7, SGTQ160V65SDB1APW, SGTQ160V65SDB1APWA, SGTQ200V75SDB1PWA, BT60T60ANFK, SGTQ30NE40I1DTR, SGTQ40T120SDB2P7, SGT10U60SDM2D, BGF15T65SD, SL15T65FF, SL15T65F, SL15T65FK, SL20T65F

Keywords - SGTQ200V75SDB1PWD transistor spec

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