All IGBT. SGTQ200V75SDB1PWD Datasheet

 

SGTQ200V75SDB1PWD IGBT. Datasheet pdf. Equivalent

Type Designator: SGTQ200V75SDB1PWD

Type: IGBT + Anti-Parallel Diode

Marking Code: Q200V75PWD

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 1000

Maximum Collector-Emitter Voltage |Vce|, V: 750

Maximum Gate-Emitter Voltage |Vge|, V: 20

Maximum Collector Current |Ic| @25℃, A: 200

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5

Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 112

Collector Capacity (Cc), typ, pF: 498

Total Gate Charge (Qg), typ, nC: 750

Package: TO247PD

SGTQ200V75SDB1PWD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ200V75SDB1PWD Datasheet (PDF)

 0.1. Size:501K  silan
sgtq200v75sdb1pwa.pdf

SGTQ200V75SDB1PWD
SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWA 200A750V C 2SGTQ200V75SDB1PWA 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.42V(

 0.2. Size:568K  silan
sgtq200v75sdb1pwd.pdf

SGTQ200V75SDB1PWD
SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWD 200A750V C 2SGTQ200V75SDB1PWD 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.50V( )@IC

Datasheet: SGTP75V120FDB2PW4 , SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , IXRP15N120 , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F .

 

 
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