All IGBT. SGTQ200V75SDB1PWD Datasheet

 

SGTQ200V75SDB1PWD Datasheet and Replacement


   Type Designator: SGTQ200V75SDB1PWD
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1000 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 112 nS
   Coesⓘ - Output Capacitance, typ: 498 pF
   Package: TO247PD
 

 SGTQ200V75SDB1PWD substitution

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SGTQ200V75SDB1PWD Datasheet (PDF)

 0.1. Size:501K  silan
 sgtq200v75sdb1pwa.pdf pdf_icon

SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWA 200A750V C 2SGTQ200V75SDB1PWA 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.42V(

 0.2. Size:568K  silan
 sgtq200v75sdb1pwd.pdf pdf_icon

SGTQ200V75SDB1PWD

SGTQ200V75SDB1PWD 200A750V C 2SGTQ200V75SDB1PWD 1GField Stop 5 Motor DrivesDC/AC converter 3 E VCE(sat)=1.50V( )@IC

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , CRG60T60AN3H , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

History: F3L100R12W2H3_B11 | MMG150S120B6TN | HGTP7N60A4D | APT80GA90LD40 | DM2G400SH6N | IHW40N135R5 | IRGP4640DPBF

Keywords - SGTQ200V75SDB1PWD transistor datasheet

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 SGTQ200V75SDB1PWD substitution
 SGTQ200V75SDB1PWD replacement

 

 
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