SGTQ30NE40I1DTR Datasheet and Replacement
Type Designator: SGTQ30NE40I1DTR
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 179 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Package: TO252
- IGBT Cross-Reference
SGTQ30NE40I1DTR Datasheet (PDF)
sgtq30ne40i1dtr.pdf
SGTQ30NE40I1D 30A400V COLLECTOR SGTQ30NE40I1D R1GATE R2 EMITTER T =175C Jmax13TO-252-2L SGT Q 30 NE 40 I 1 DIGBT,
Datasheet: SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , IRG4PH50UD , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 .
History: IXGH30N60BU1 | FGA30S120P | RJP60V0DPM | MG300N1US1 | GT10G101 | SMBH1G100US60 | GT50T101
Keywords - SGTQ30NE40I1DTR transistor datasheet
SGTQ30NE40I1DTR cross reference
SGTQ30NE40I1DTR equivalent finder
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SGTQ30NE40I1DTR substitution
SGTQ30NE40I1DTR replacement
History: IXGH30N60BU1 | FGA30S120P | RJP60V0DPM | MG300N1US1 | GT10G101 | SMBH1G100US60 | GT50T101
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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