SGTQ30NE40I1DTR IGBT. Datasheet pdf. Equivalent

   Type Designator: SGTQ30NE40I1DTR
   Type: IGBT + Built-in Zener Diodes
   Marking Code: Q30NE40I
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.7(typ) V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 179 nS
   Coesⓘ - Output Capacitance, typ: 58 pF
   Qgⓘ - Total Gate Charge, typ: 13 nC
   Package: TO252

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