SGTQ30NE40I1DTR Specs and Replacement
Type Designator: SGTQ30NE40I1DTR
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 179 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Package: TO252
SGTQ30NE40I1DTR Substitution
SGTQ30NE40I1DTR specs
Specs: SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , XNF15N60T , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 .
Keywords - SGTQ30NE40I1DTR transistor spec
SGTQ30NE40I1DTR cross reference
SGTQ30NE40I1DTR equivalent finder
SGTQ30NE40I1DTR lookup
SGTQ30NE40I1DTR substitution
SGTQ30NE40I1DTR replacement
LIST
Last Update
IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
Popular searches
irf9530 | 2n2222a transistor | irfp250 | irf640n datasheet | irf540 datasheet | irf530 | 2n3565 | irf530n