SGTQ30NE40I1DTR Datasheet. Specs and Replacement
Type Designator: SGTQ30NE40I1DTR 📄📄
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
tr ⓘ - Rise Time, typ: 179 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Package: TO252
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SGTQ30NE40I1DTR datasheet
Specs: SGTP75V65FDB1P4B, SGTP75V65FDB1P7, SGTP75V65SDB1P7, SGTP75V65SDS1P7, SGTQ160V65SDB1APW, SGTQ160V65SDB1APWA, SGTQ200V75SDB1PWA, SGTQ200V75SDB1PWD, GT60N321, SGTQ40T120SDB2P7, SGT10U60SDM2D, BGF15T65SD, SL15T65FF, SL15T65F, SL15T65FK, SL20T65F, SL20T65
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History: SL20T65FL1
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