All IGBT. SGTQ30NE40I1DTR Datasheet

 

SGTQ30NE40I1DTR IGBT. Datasheet pdf. Equivalent


   Type Designator: SGTQ30NE40I1DTR
   Type: IGBT + Built-in Zener Diodes
   Marking Code: Q30NE40I
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 150 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.7(typ) V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 179 nS
   Coesⓘ - Output Capacitance, typ: 58 pF
   Qgⓘ - Total Gate Charge, typ: 13 nC
   Package: TO252
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SGTQ30NE40I1DTR Datasheet (PDF)

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SGTQ30NE40I1DTR
SGTQ30NE40I1DTR

SGTQ30NE40I1D 30A400V COLLECTOR SGTQ30NE40I1D R1GATE R2 EMITTER T =175C Jmax13TO-252-2L SGT Q 30 NE 40 I 1 DIGBT,

Datasheet: SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , IRG4PH50UD , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 .

 

 
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