SGTQ30NE40I1DTR IGBT. Datasheet pdf. Equivalent

   Type Designator: SGTQ30NE40I1DTR
   Type: IGBT + Built-in Zener Diodes
   Marking Code: Q30NE40I
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 150
   Maximum Collector-Emitter Voltage |Vce|, V: 400
   Maximum Gate-Emitter Voltage |Vge|, V: 28
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.3
   Maximum G-E Threshold Voltag |VGE(th)|, V: 1.7(typ)
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 179
   Collector Capacity (Cc), typ, pF: 58
   Total Gate Charge (Qg), typ, nC: 13
   Package: TO252

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