SGTQ30NE40I1DTR Specs and Replacement
Type Designator: SGTQ30NE40I1DTR
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
tr ⓘ - Rise Time, typ: 179 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Package: TO252
SGTQ30NE40I1DTR Substitution - IGBT ⓘ Cross-Reference Search
SGTQ30NE40I1DTR datasheet
Specs: SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , XNF15N60T , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 .
History: GT30F132
Keywords - SGTQ30NE40I1DTR transistor spec
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History: GT30F132
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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