SGTQ30NE40I1DTR Datasheet and Replacement
Type Designator: SGTQ30NE40I1DTR
Type: IGBT + Built-in Zener Diodes
Marking Code: Q30NE40I
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 150 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 400 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 28 V
|Ic| ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.3 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 1.7(typ) V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 179 nS
Coesⓘ - Output Capacitance, typ: 58 pF
Qg ⓘ - Total Gate Charge, typ: 13 nC
Package: TO252
SGTQ30NE40I1DTR substitution
SGTQ30NE40I1DTR Datasheet (PDF)
sgtq30ne40i1dtr.pdf
SGTQ30NE40I1D 30A400V COLLECTOR SGTQ30NE40I1D R1GATE R2 EMITTER T =175C Jmax13TO-252-2L SGT Q 30 NE 40 I 1 DIGBT,
Datasheet: SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , RGT50TS65D , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 .
History: FGH60N60UFDTU-F085 | VS-GA200SA60UP
Keywords - SGTQ30NE40I1DTR transistor datasheet
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SGTQ30NE40I1DTR replacement
History: FGH60N60UFDTU-F085 | VS-GA200SA60UP
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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