All IGBT. SGTQ30NE40I1DTR Datasheet

 

SGTQ30NE40I1DTR IGBT. Datasheet pdf. Equivalent

Type Designator: SGTQ30NE40I1DTR

Type: IGBT + Built-in Zener Diodes

Marking Code: Q30NE40I

Type of IGBT Channel: N

Maximum Power Dissipation (Pc), W: 150

Maximum Collector-Emitter Voltage |Vce|, V: 400

Maximum Gate-Emitter Voltage |Vge|, V: 28

Maximum Collector Current |Ic| @25℃, A: 40

Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.3

Maximum G-E Threshold Voltag |VGE(th)|, V: 1.7(typ)

Maximum Junction Temperature (Tj), ℃: 175

Rise Time (tr), typ, nS: 179

Collector Capacity (Cc), typ, pF: 58

Total Gate Charge (Qg), typ, nC: 13

Package: TO252

SGTQ30NE40I1DTR Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ30NE40I1DTR Datasheet (PDF)

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sgtq30ne40i1dtr.pdf

SGTQ30NE40I1DTR
SGTQ30NE40I1DTR

SGTQ30NE40I1D 30A400V COLLECTOR SGTQ30NE40I1D R1GATE R2 EMITTER T =175C Jmax13TO-252-2L SGT Q 30 NE 40 I 1 DIGBT,

Datasheet: SGTP75V65FDB1P4B , SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGP30N60 , SGTQ40T120SDB2P7 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 .

 

 
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