All IGBT. SGTQ40T120SDB2P7 Datasheet

 

SGTQ40T120SDB2P7 IGBT. Datasheet pdf. Equivalent


   Type Designator: SGTQ40T120SDB2P7
   Type: IGBT
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 429
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 80
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.75
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 28
   Collector Capacity (Cc), typ, pF: 197
   Package: TO247

 SGTQ40T120SDB2P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ40T120SDB2P7 Datasheet (PDF)

 0.1. Size:449K  silan
 sgtq40t120sdb2p7.pdf

SGTQ40T120SDB2P7 SGTQ40T120SDB2P7

SGTQ40T120SDB2P7 40A1200V C 2SGTQ40T120SDB2P7 1GTrench Field Stop IVUPSSMPS PFC 3E 40A1200VVCE(sat)(

Datasheet: SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , STGW45HF60WD , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 , SL20T65FZ .

 

 
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