All IGBT. SGTQ40T120SDB2P7 Datasheet

 

SGTQ40T120SDB2P7 Datasheet and Replacement


   Type Designator: SGTQ40T120SDB2P7
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 429 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 197 pF
   Package: TO247
 

 SGTQ40T120SDB2P7 substitution

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SGTQ40T120SDB2P7 Datasheet (PDF)

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SGTQ40T120SDB2P7

SGTQ40T120SDB2P7 40A1200V C 2SGTQ40T120SDB2P7 1GTrench Field Stop IVUPSSMPS PFC 3E 40A1200VVCE(sat)(

Datasheet: SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , GT60N321 , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 , SL20T65FZ .

History: NTE3302 | 2M410V | MIEB100W1200TEH | NGTB30N120L2

Keywords - SGTQ40T120SDB2P7 transistor datasheet

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