All IGBT. SGTQ40T120SDB2P7 Datasheet

 

SGTQ40T120SDB2P7 Datasheet and Replacement


   Type Designator: SGTQ40T120SDB2P7
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 429 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 197 pF
   Package: TO247
 

 SGTQ40T120SDB2P7 substitution

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SGTQ40T120SDB2P7 Datasheet (PDF)

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SGTQ40T120SDB2P7

SGTQ40T120SDB2P7 40A1200V C 2SGTQ40T120SDB2P7 1GTrench Field Stop IVUPSSMPS PFC 3E 40A1200VVCE(sat)(

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: IXGH64N60B3 | FGH20N60SFDTU-F085 | 2MBI200VA-060-50 | IRG4BC30KD-S | AIKW75N60CT | STGWA30H60DFB | 2MBI225U4N-170-50

Keywords - SGTQ40T120SDB2P7 transistor datasheet

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 SGTQ40T120SDB2P7 replacement

 

 
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