All IGBT. SGTQ40T120SDB2P7 Equivalents Search

 

SGTQ40T120SDB2P7 Spec and Replacement


   Type Designator: SGTQ40T120SDB2P7
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 429 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 197 pF
   Package: TO247

 SGTQ40T120SDB2P7 Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

SGTQ40T120SDB2P7 specs

 0.1. Size:449K  silan
 sgtq40t120sdb2p7.pdf pdf_icon

SGTQ40T120SDB2P7

SGTQ40T120SDB2P7 40A 1200V C 2 SGTQ40T120SDB2P7 1 G Trench Field Stop IV UPS SMPS PFC 3 E 40A 1200V VCE(sat)( ... See More ⇒

Specs: SGTP75V65FDB1P7 , SGTP75V65SDB1P7 , SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , IRG4PF50W , SGT10U60SDM2D , BGF15T65SD , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 , SL20T65FZ .

History: OM6526SA

Keywords - SGTQ40T120SDB2P7 transistor spec

 SGTQ40T120SDB2P7 cross reference
 SGTQ40T120SDB2P7 equivalent finder
 SGTQ40T120SDB2P7 lookup
 SGTQ40T120SDB2P7 substitution
 SGTQ40T120SDB2P7 replacement

 

 
Back to Top

 


 
.