SGTQ40T120SDB2P7 Datasheet. Specs and Replacement

Type Designator: SGTQ40T120SDB2P7  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 429 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 197 pF

Package: TO247

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SGTQ40T120SDB2P7 datasheet

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SGTQ40T120SDB2P7

SGTQ40T120SDB2P7 40A 1200V C 2 SGTQ40T120SDB2P7 1 G Trench Field Stop IV UPS SMPS PFC 3 E 40A 1200V VCE(sat)( ... See More ⇒

Specs: SGTP75V65FDB1P7, SGTP75V65SDB1P7, SGTP75V65SDS1P7, SGTQ160V65SDB1APW, SGTQ160V65SDB1APWA, SGTQ200V75SDB1PWA, SGTQ200V75SDB1PWD, SGTQ30NE40I1DTR, IRG4PF50W, SGT10U60SDM2D, BGF15T65SD, SL15T65FF, SL15T65F, SL15T65FK, SL20T65F, SL20T65, SL20T65FZ

Keywords - SGTQ40T120SDB2P7 transistor spec

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