All IGBT. BGF15T65SD Datasheet

 

BGF15T65SD Datasheet and Replacement


   Type Designator: BGF15T65SD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 15T65SD
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 37.5 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 30 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 59 nS
   Coesⓘ - Output Capacitance, typ: 63 pF
   Qg ⓘ - Total Gate Charge, typ: 21.1 nC
   Package: TO220F
 

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BGF15T65SD Datasheet (PDF)

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BGF15T65SD

BGF15T65SDIGBT in advanced TrenchFS Technology with soft and fast recovery anti-parallel diode TrenchFS IGBT Features: 650V TrenchFS technology650V Low conduction and switching losses Positive temperature coefficient Short Cir

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

Keywords - BGF15T65SD transistor datasheet

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