All IGBT. BGF15T65SD Datasheet

 

BGF15T65SD IGBT. Datasheet pdf. Equivalent


   Type Designator: BGF15T65SD
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 15T65SD
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 37.5
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 30
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 59
   Collector Capacity (Cc), typ, pF: 63
   Total Gate Charge (Qg), typ, nC: 21.1
   Package: TO220F

 BGF15T65SD Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BGF15T65SD Datasheet (PDF)

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 bgf15t65sd.pdf

BGF15T65SD BGF15T65SD

BGF15T65SDIGBT in advanced TrenchFS Technology with soft and fast recovery anti-parallel diode TrenchFS IGBT Features: 650V TrenchFS technology650V Low conduction and switching losses Positive temperature coefficient Short Cir

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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