BGF15T65SD Datasheet and Replacement
Type Designator: BGF15T65SD
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 37.5 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 59 nS
Coesⓘ - Output Capacitance, typ: 63 pF
Package: TO220F
BGF15T65SD substitution
BGF15T65SD Datasheet (PDF)
bgf15t65sd.pdf
BGF15T65SDIGBT in advanced TrenchFS Technology with soft and fast recovery anti-parallel diode TrenchFS IGBT Features: 650V TrenchFS technology650V Low conduction and switching losses Positive temperature coefficient Short Cir
Datasheet: SGTP75V65SDS1P7 , SGTQ160V65SDB1APW , SGTQ160V65SDB1APWA , SGTQ200V75SDB1PWA , SGTQ200V75SDB1PWD , SGTQ30NE40I1DTR , SGTQ40T120SDB2P7 , SGT10U60SDM2D , MBQ50T65FESC , SL15T65FF , SL15T65F , SL15T65FK , SL20T65F , SL20T65 , SL20T65FZ , SL20T65FL , SL20T65FL1 .
History: MG75Q1BS11
Keywords - BGF15T65SD transistor datasheet
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History: MG75Q1BS11
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