SL40T65FL1 IGBT. Datasheet pdf. Equivalent
Type Designator: SL40T65FL1
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 375
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 80
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.8
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 54
Collector Capacity (Cc), typ, pF: 131
Total Gate Charge (Qg), typ, nC: 219
Package: TO247
SL40T65FL1 Transistor Equivalent Substitute - IGBT Cross-Reference Search
SL40T65FL1 Datasheet (PDF)
sl40t65fl1.pdf
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SL40T65FL1Features High Speed Switching &Low Power Loss V =1.95V@ I =40ACE(sat) C Eoff=0.35mJ@Tc=25 High Input Impedance Trr=80ns(Typ)@diF/dt=1000A/us Maximum junction temperatureT =175CvjmaxApplications UPS PFC Welder IH Cooker PV InverterAbsolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage
sl40t65fl.pdf
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SL40T65FL650V 40A IGBTFeatures High Speed Switching & Low Power Loss VCE(sat) = 1.95V @ IC = 40A E = 0.35mJ @ T = 25C off C High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F Maximum junction temperature 175C Applications PFC Welder UPS IH Cooker PV Inverter TO-247Maximum Rating Parameter Symbol Rating
Datasheet: SL20T65F , SL20T65 , SL20T65FZ , SL20T65FL , SL20T65FL1 , SL20T65K1 , SL20T65F1 , SL25T120FL , FGH40N60UFD , SIF30N60G21B , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F .
![SL40T65FL1](https://alltransistors.com/images/us.png)
![SL40T65FL1](https://alltransistors.com/images/es.png)
![SL40T65FL1](https://alltransistors.com/images/ru.png)
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