All IGBT. SL40T65FL1 Datasheet

 

SL40T65FL1 Datasheet and Replacement


   Type Designator: SL40T65FL1
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 375 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 54 nS
   Coesⓘ - Output Capacitance, typ: 131 pF
   Package: TO247
 

 SL40T65FL1 substitution

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SL40T65FL1 Datasheet (PDF)

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SL40T65FL1

SL40T65FL1Features High Speed Switching &Low Power Loss V =1.95V@ I =40ACE(sat) C Eoff=0.35mJ@Tc=25 High Input Impedance Trr=80ns(Typ)@diF/dt=1000A/us Maximum junction temperatureT =175CvjmaxApplications UPS PFC Welder IH Cooker PV InverterAbsolute Ratings(Tc=25)Parameter Symbol Value UnitCollector-Emmiter Voltage

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SL40T65FL1

SL40T65FL650V 40A IGBTFeatures High Speed Switching & Low Power Loss VCE(sat) = 1.95V @ IC = 40A E = 0.35mJ @ T = 25C off C High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F Maximum junction temperature 175C Applications PFC Welder UPS IH Cooker PV Inverter TO-247Maximum Rating Parameter Symbol Rating

Datasheet: SL20T65F , SL20T65 , SL20T65FZ , SL20T65FL , SL20T65FL1 , SL20T65K1 , SL20T65F1 , SL25T120FL , RJP63K2DPP-M0 , SIF30N60G21B , SIP30N60G21B , SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F .

History: RJP60V0DPM

Keywords - SL40T65FL1 transistor datasheet

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