SL40T65FL1 Datasheet. Specs and Replacement

Type Designator: SL40T65FL1  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 375 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V

|Ic| ⓘ - Maximum Collector Current: 80 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃

tr ⓘ - Rise Time, typ: 54 nS

Coesⓘ - Output Capacitance, typ: 131 pF

Package: TO247

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SL40T65FL1 datasheet

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SL40T65FL1

SL40T65FL1 Features High Speed Switching & Low Power Loss V =1.95V@ I =40A CE(sat) C Eoff=0.35mJ@Tc=25 High Input Impedance Trr=80ns(Typ)@diF/dt=1000A/us Maximum junction temperature T =175 C vjmax Applications UPS PFC Welder IH Cooker PV Inverter Absolute Ratings(Tc=25 ) Parameter Symbol Value Unit Collector-Emmiter Voltage ... See More ⇒

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SL40T65FL1

SL40T65FL 650V 40A IGBT Features High Speed Switching & Low Power Loss VCE(sat) = 1.95V @ IC = 40A E = 0.35mJ @ T = 25 C off C High Input Impedance t = 80ns (typ.) @di /dt = 1000A/ s rr F Maximum junction temperature 175 C Applications PFC Welder UPS IH Cooker PV Inverter TO-247 Maximum Rating Parameter Symbol Rating ... See More ⇒

Specs: SL20T65F, SL20T65, SL20T65FZ, SL20T65FL, SL20T65FL1, SL20T65K1, SL20T65F1, SL25T120FL, RJP63K2DPP-M0, SIF30N60G21B, SIP30N60G21B, SIW30N60G21B, SIB30N60G21B, SIF30N65G21F, SIP30N65G21F, SIW30N65G21F, SIB30N65G21F

Keywords - SL40T65FL1 transistor spec

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