SKT030N065 Datasheet and Replacement
Type Designator: SKT030N065
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 234 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 60 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.75 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tj ⓘ - Maximum Junction Temperature: 175 ℃
tr ⓘ - Rise Time, typ: 67 nS
Coesⓘ - Output Capacitance, typ: 160 pF
Qg ⓘ - Total Gate Charge, typ: 64.5 nC
Package: TO247
SKT030N065 substitution
SKT030N065 Datasheet (PDF)
skt030n065.pdf
SKT030N065 IGBT 650V, 30A,Vcesat 1.75VFEATURESProduct SummaryLow gate chargeVDS650VTrench FS Trench FS TechnologyVcesattyp. 1.75VRoHS RoHS productID30AAPPLICATIONS100% DVDS TestedGeneral purpose inverters100% Avalanche TestedUPSUPS SKT030N065Package Markin
Datasheet: SIW30N60G21B , SIB30N60G21B , SIF30N65G21F , SIP30N65G21F , SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , FGH60N60SMD , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , ATT050K065FQC , ATT060U060EQ , ATT075N065EQ , JT010N065SED , JT010N065CED .
History: MMG25H120X6TN
Keywords - SKT030N065 transistor datasheet
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History: MMG25H120X6TN
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