All IGBT. ATT050K065FQC Datasheet

 

ATT050K065FQC Datasheet and Replacement


   Type Designator: ATT050K065FQC
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 394 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.35 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 52 nS
   Coesⓘ - Output Capacitance, typ: 325 pF
   Qg ⓘ - Total Gate Charge, typ: 153 nC
   Package: TO-247-4L
 

 ATT050K065FQC substitution

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ATT050K065FQC Datasheet (PDF)

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ATT050K065FQC

N N-CHANNEL IGBT RATT050K065FQC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.35V APPLICATIONS Charging pile UPS UPS Solar converters Energy Storage Built in SiC SBD FEATURES Low gate

Datasheet: SIW30N65G21F , SIB30N65G21F , GT40T321 , KDG20N120H2 , SKT030N065 , ATT030N065EQ , ATT040K065EQ , ATT040N120EQ , RJP30H1DPD , ATT060U060EQ , ATT075N065EQ , JT010N065SED , JT010N065CED , JT010N065FED , JT010N065WED , JT015N065SED , JT015N065CED .

History: BRG60N65D | FGH50N6S2D | VS-40MT120UHTAPBF | IXGA14N120B | MMG50S120B6TC | IXGX400N30A | BSM50GB120DN2

Keywords - ATT050K065FQC transistor datasheet

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