All IGBT. JT015N120F7PD1E Datasheet

 

JT015N120F7PD1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT015N120F7PD1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 130
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 15
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 38
   Collector Capacity (Cc), typ, pF: 78
   Total Gate Charge (Qg), typ, nC: 112
   Package: MODULE

 JT015N120F7PD1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT015N120F7PD1E Datasheet (PDF)

 0.1. Size:1240K  jilin sino
 jt015n120f7pd1e.pdf

JT015N120F7PD1E JT015N120F7PD1E

IGBT IGBT Modules RIGBT JT015N120F7PD1E MAIN CHARACTERISTICS Package IC 15A 1200V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Auxiliary inverter Motor Drives air conditioning FEATURES FS Technology

 8.1. Size:300K  jilin sino
 jt015n065fed.pdf

JT015N120F7PD1E JT015N120F7PD1E

N N-CHANNEL IGBT RJT015N065FED MAIN CHARACTERISTICS Package IC 15 A VCES 650V Vcesat-typ 1.6V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,

 8.2. Size:1254K  jilin sino
 jt015n065fed jt015n065sed jt015n065ced.pdf

JT015N120F7PD1E JT015N120F7PD1E

N N-CHANNEL IGBT RJT015N065FED/SED/CED MAIN CHARACTERISTICS Package IC 15 A VCES 650V VCESAT-TY 1.6V VGE=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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