JT020N135WED Specs and Replacement
Type Designator: JT020N135WED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 510 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 20 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 46 nS
Coesⓘ - Output Capacitance, typ: 90 pF
Package: TO-247
JT020N135WED Substitution - IGBTⓘ Cross-Reference Search
JT020N135WED datasheet
jt020n065sed jt020n065ced jt020n065wed jt020n065fed.pdf
N N-CHANNEL IGBT R JT020N065SED/CED/WED/FED MAIN CHARACTERISTICS Package I 20 A C BV 650V CES V CESAT-typ 1.6V V =15V GE APPLICATIONS General purpose inverters UPS UPS TO-263 FEATURES TO-220C Low gate charge Trenc... See More ⇒
Specs: JT010N065WED, JT015N065SED, JT015N065CED, JT015N120F7PD1E, JT020N065SED, JT020N065CED, JT020N065WED, JT020N065FED, G50T65D, JT030N065AED, JT030N065F6MD1E, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED, JT040K065AED
Keywords - JT020N135WED transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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