All IGBT. JT020N135WED Datasheet

 

JT020N135WED Datasheet and Replacement


   Type Designator: JT020N135WED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 510 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Qgⓘ - Total Gate Charge, typ: 130 nC
   Package: TO-247
      - IGBT Cross-Reference

 

JT020N135WED Datasheet (PDF)

 ..1. Size:978K  jilin sino
 jt020n135wed.pdf pdf_icon

JT020N135WED

N N-CHANNEL IGBT R JT020N135WED MAIN CHARACTERISTICS Package IC 20 A VCES 1350V VCESAT-TYPVGE=15V 1.7V APPLICATIONS IH Induction heating(IH) Inverterized microwave ovens Soft switching applications FEATURES

 8.1. Size:2704K  jilin sino
 jt020n065sed jt020n065ced jt020n065wed jt020n065fed.pdf pdf_icon

JT020N135WED

N N-CHANNEL IGBT RJT020N065SED/CED/WED/FED MAIN CHARACTERISTICS Package I 20 A CBV 650V CESVCESAT-typ 1.6V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 FEATURES TO-220C Low gate charge Trenc

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: DIM600DDM17-A

Keywords - JT020N135WED transistor datasheet

 JT020N135WED cross reference
 JT020N135WED equivalent finder
 JT020N135WED lookup
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 JT020N135WED replacement

 

 
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