All IGBT. JT020N135WED Datasheet

 

JT020N135WED Datasheet and Replacement


   Type Designator: JT020N135WED
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 510 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1350 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 46 nS
   Coesⓘ - Output Capacitance, typ: 90 pF
   Package: TO-247
 

 JT020N135WED substitution

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JT020N135WED Datasheet (PDF)

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JT020N135WED

N N-CHANNEL IGBT R JT020N135WED MAIN CHARACTERISTICS Package IC 20 A VCES 1350V VCESAT-TYPVGE=15V 1.7V APPLICATIONS IH Induction heating(IH) Inverterized microwave ovens Soft switching applications FEATURES

 8.1. Size:2704K  jilin sino
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JT020N135WED

N N-CHANNEL IGBT RJT020N065SED/CED/WED/FED MAIN CHARACTERISTICS Package I 20 A CBV 650V CESVCESAT-typ 1.6V V =15V GEAPPLICATIONS General purpose inverters UPS UPS TO-263 FEATURES TO-220C Low gate charge Trenc

Datasheet: JT010N065WED , JT015N065SED , JT015N065CED , JT015N120F7PD1E , JT020N065SED , JT020N065CED , JT020N065WED , JT020N065FED , IRGP4063D , JT030N065AED , JT030N065F6MD1E , JT030N065F7PD1E , JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED .

History: TT040U065FB | IXXK160N65C4

Keywords - JT020N135WED transistor datasheet

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