All IGBT. JT040K065WED Datasheet

 

JT040K065WED Datasheet and Replacement


   Type Designator: JT040K065WED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 340 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 84 nS
   Coesⓘ - Output Capacitance, typ: 193 pF
   Qgⓘ - Total Gate Charge, typ: 79.2 nC
   Package: TO-247
      - IGBT Cross-Reference

 

JT040K065WED Datasheet (PDF)

 ..1. Size:1783K  jilin sino
jt040k065wed jt040k065aed.pdf pdf_icon

JT040K065WED

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: XNG100B24TC1S5 | CM800HB-50H | AOK50B65H1 | IQGB300N120I4 | 2MBI900VXA-120P-50 | IXBT12N300 | BT15T60A8F

Keywords - JT040K065WED transistor datasheet

 JT040K065WED cross reference
 JT040K065WED equivalent finder
 JT040K065WED lookup
 JT040K065WED substitution
 JT040K065WED replacement

 

 
Back to Top

 


 
.