JT040K065WED IGBT. Datasheet pdf. Equivalent
Type Designator: JT040K065WED
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 340 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 84 nS
Coesⓘ - Output Capacitance, typ: 193 pF
Package: TO-247
JT040K065WED Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT040K065WED Datasheet (PDF)
jt040k065wed jt040k065aed.pdf
N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench
Datasheet: JT020N065FED , JT020N135WED , JT030N065AED , JT030N065F6MD1E , JT030N065F7PD1E , JT030N065WED , JT030N065FED , JT030N065SED , GT30F126 , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD .
LIST
Last Update
IGBT: AOTS40B65H1 | AOTF8B65MQ1 | AOTF5B65M2 | AOTF5B65M1 | AOTF20B65M2 | AOTF20B65M1 | AOTF20B65LN2 | AOTF15B65MQ1 | AOTF15B65M3 | AOTF15B65M2 | AOTF15B60D2