JT040K065WED Datasheet and Replacement
Type Designator: JT040K065WED
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 340 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 40 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 84 nS
Coesⓘ - Output Capacitance, typ: 193 pF
Qgⓘ - Total Gate Charge, typ: 79.2 nC
Package: TO-247
- IGBT Cross-Reference
JT040K065WED Datasheet (PDF)
jt040k065wed jt040k065aed.pdf

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: XNG100B24TC1S5 | CM800HB-50H | AOK50B65H1 | IQGB300N120I4 | 2MBI900VXA-120P-50 | IXBT12N300 | BT15T60A8F
Keywords - JT040K065WED transistor datasheet
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History: XNG100B24TC1S5 | CM800HB-50H | AOK50B65H1 | IQGB300N120I4 | 2MBI900VXA-120P-50 | IXBT12N300 | BT15T60A8F



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