All IGBT. JT040K065WED Datasheet

 

JT040K065WED IGBT. Datasheet pdf. Equivalent


   Type Designator: JT040K065WED
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 340
   Maximum Collector-Emitter Voltage |Vce|, V: 650
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 40
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 84
   Collector Capacity (Cc), typ, pF: 193
   Total Gate Charge (Qg), typ, nC: 79.2
   Package: TO-247

 JT040K065WED Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT040K065WED Datasheet (PDF)

 ..1. Size:1783K  jilin sino
 jt040k065wed jt040k065aed.pdf

JT040K065WED JT040K065WED

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench

Datasheet: JT020N065FED , JT020N135WED , JT030N065AED , JT030N065F6MD1E , JT030N065F7PD1E , JT030N065WED , JT030N065FED , JT030N065SED , SGT40N60FD2PN , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD .

 

 
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