JT040K065WED PDF and Equivalents Search

 

JT040K065WED Specs and Replacement

Type Designator: JT040K065WED

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 340 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 40 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃

tr ⓘ - Rise Time, typ: 84 nS

Coesⓘ - Output Capacitance, typ: 193 pF

Package: TO-247

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JT040K065WED datasheet

 ..1. Size:1783K  jilin sino
 jt040k065wed jt040k065aed.pdf pdf_icon

JT040K065WED

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15V APPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench... See More ⇒

Specs: JT020N065FED, JT020N135WED, JT030N065AED, JT030N065F6MD1E, JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, IHW20N135R5, JT040K065AED, JT050K120F2MA1E, JT050N065WED, JT050N120F2MA1E, JT050N120GPED, JT05N065RAD, JT05N065VAD, JT05N065SAD

Keywords - JT040K065WED transistor spec

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