All IGBT. JT040K065WED Datasheet

 

JT040K065WED Datasheet and Replacement


   Type Designator: JT040K065WED
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 340 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 40 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 84 nS
   Coesⓘ - Output Capacitance, typ: 193 pF
   Package: TO-247
 

 JT040K065WED substitution

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JT040K065WED Datasheet (PDF)

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JT040K065WED

N N-CHANNEL IGBT R JT040K065WED/AED MAIN CHARACTERISTICS Package IC 40 A VCE 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor Control FEATURES Low gate charge Trench

Datasheet: JT020N065FED , JT020N135WED , JT030N065AED , JT030N065F6MD1E , JT030N065F7PD1E , JT030N065WED , JT030N065FED , JT030N065SED , CRG60T60AN3H , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD .

History: FGD3245G2-F085V

Keywords - JT040K065WED transistor datasheet

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