All IGBT. JT050N120F2MA1E Datasheet

 

JT050N120F2MA1E Datasheet and Replacement


   Type Designator: JT050N120F2MA1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 285 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 66 nS
   Coesⓘ - Output Capacitance, typ: 260 pF
   Qgⓘ - Total Gate Charge, typ: 200 nC
   Package: MODULE
      - IGBT Cross-Reference

 

JT050N120F2MA1E Datasheet (PDF)

 0.1. Size:1007K  jilin sino
 jt050n120f2ma1e.pdf pdf_icon

JT050N120F2MA1E

N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS

 5.1. Size:1652K  jilin sino
 jt050n120gped.pdf pdf_icon

JT050N120F2MA1E

N N-CHANNEL IGBT RJT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS

 8.1. Size:723K  jilin sino
 jt050n065wed.pdf pdf_icon

JT050N120F2MA1E

N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS

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Datasheet: JT030N065F7PD1E , JT030N065WED , JT030N065FED , JT030N065SED , JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , SGT60N60FD1P7 , JT050N120GPED , JT05N065RAD , JT05N065VAD , JT05N065SAD , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED .

History: AOK20B120D1

Keywords - JT050N120F2MA1E transistor datasheet

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