JT050N120F2MA1E Specs and Replacement
Type Designator: JT050N120F2MA1E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 285 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 50 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 260 pF
Package: MODULE JT050N120F2MA1E Substitution - IGBTⓘ Cross-Reference Search
JT050N120F2MA1E datasheet
jt050n120f2ma1e.pdf
N N-CHANNEL IGBT R IGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CES Vcesat_typ 1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS ... See More ⇒
jt050n120gped.pdf
N N-CHANNEL IGBT R JT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS ... See More ⇒
jt050n065wed.pdf
N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15V APPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS... See More ⇒
Specs: JT030N065F7PD1E, JT030N065WED, JT030N065FED, JT030N065SED, JT040K065WED, JT040K065AED, JT050K120F2MA1E, JT050N065WED, CRG60T60AK3HD, JT050N120GPED, JT05N065RAD, JT05N065VAD, JT05N065SAD, JT05N065RED, JT05N065SED, JT05N065FED, JT05N065CED
Keywords - JT050N120F2MA1E transistor spec
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History: MGP20N35CL | SKM195GB063DN | SKM200GAL173D | SKM200GAR123D | JT040K065WED | AOK20B120E1 | IXXK100N60B3H1
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