All IGBT. JT050N120F2MA1E Datasheet

 

JT050N120F2MA1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT050N120F2MA1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 285
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 50
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 66
   Collector Capacity (Cc), typ, pF: 260
   Total Gate Charge (Qg), typ, nC: 200
   Package: MODULE

 JT050N120F2MA1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT050N120F2MA1E Datasheet (PDF)

 0.1. Size:1007K  jilin sino
 jt050n120f2ma1e.pdf

JT050N120F2MA1E JT050N120F2MA1E

N N-CHANNEL IGBT RIGBT JT050N120F2MA1E MAIN CHARACTERISTICS Package IC 50 A 1200 V V CESVcesat_typ1.80V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Technology FS

 5.1. Size:1652K  jilin sino
 jt050n120gped.pdf

JT050N120F2MA1E JT050N120F2MA1E

N N-CHANNEL IGBT RJT050N120GPED MAIN CHARACTERISTICS Package TO-247plus IC 50A VCE 1200V Vcesat-typ 2.0V APPLICATIONS TO-247plus General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS

 8.1. Size:723K  jilin sino
 jt050n065wed.pdf

JT050N120F2MA1E JT050N120F2MA1E

N N-CHANNEL IGBT R JT050N065WED MAIN CHARACTERISTICS Package IC 50 A VCES 650V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters UPS UPS Motor control FEATURES Low gate charge Trench FS

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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