JT05N065SAD IGBT. Datasheet pdf. Equivalent
Type Designator: JT05N065SAD
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 96
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 30
Maximum Collector Current |Ic| @25℃, A: 5
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.7
Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
Maximum Junction Temperature (Tj), ℃: 150
Rise Time (tr), typ, nS: 13
Collector Capacity (Cc), typ, pF: 32.7
Total Gate Charge (Qg), typ, nC: 11.8
Package: TO-263
JT05N065SAD Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT05N065SAD Datasheet (PDF)
jt05n065rad jt05n065vad jt05n065sad.pdf
N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech
jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf
N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology
Datasheet: JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , IRG7R313U , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED .
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IGBT: BRGH25N120D | BRGH15N120D | BRGB6N65DP | BRG60N60D | BRG10N120D | TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ