JT05N065SAD IGBT. Datasheet pdf. Equivalent
Type Designator: JT05N065SAD
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 96 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 5 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 13 nS
Coesⓘ - Output Capacitance, typ: 32.7 pF
Package: TO-263
JT05N065SAD Transistor Equivalent Substitute - IGBT Cross-Reference Search
JT05N065SAD Datasheet (PDF)
jt05n065rad jt05n065vad jt05n065sad.pdf
N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech
jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf
N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology
Datasheet: JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , SGH80N60UFD , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED .
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