All IGBT. JT05N065SAD Datasheet

 

JT05N065SAD Datasheet and Replacement


   Type Designator: JT05N065SAD
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 96 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 5 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 13 nS
   Coesⓘ - Output Capacitance, typ: 32.7 pF
   Qg ⓘ - Total Gate Charge, typ: 11.8 nC
   Package: TO-263
 

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JT05N065SAD Datasheet (PDF)

 ..1. Size:1562K  jilin sino
 jt05n065rad jt05n065vad jt05n065sad.pdf pdf_icon

JT05N065SAD

N N-CHANNEL IGBT RJT05N065RAD/VAD/SAD MAIN CHARACTERISTICS Package IC 5 A VCES 650V Vcesat-typ 1.7V Vge=15VAPPLICATIONS General purpose inverters PDP PDP UPS UPS FEATURES Low gate charge FS FS Tech

 5.1. Size:2071K  jilin sino
 jt05n065red jt05n065ved jt05n065sed jt05n065fed jt05n065ced.pdf pdf_icon

JT05N065SAD

N N-CHANNEL IGBT RJT05N065RED/SED/FED/CED MAIN CHARACTERISTICS Package IC 6 A VCE 650V VcesatVge=15V 1.6V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS Trench FS Technology

Datasheet: JT040K065WED , JT040K065AED , JT050K120F2MA1E , JT050N065WED , JT050N120F2MA1E , JT050N120GPED , JT05N065RAD , JT05N065VAD , SGH80N60UFD , JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED .

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