JT075N065GHED Specs and Replacement
Type Designator: JT075N065GHED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 520 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.7 V @25℃
tr ⓘ - Rise Time, typ: 150 nS
Coesⓘ - Output Capacitance, typ: 430 pF
Package: TO-247-4L
JT075N065GHED Substitution - IGBTⓘ Cross-Reference Search
JT075N065GHED datasheet
jt075n065wed.pdf
N N-CHANNEL IGBT R JT075N065WED MAIN CHARACTERISTICS Package IC 75A VCES 650V Vcesat-typ 1.75V @Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,... See More ⇒
jt075n120gped.pdf
N N-CHANNEL IGBT R JT075N120GPED MAIN CHARACTERISTICS Package IC 75A VCE 1200V Vcesat-typ 1.9V APPLICATIONS General purpose Inverters UPS UPS FEATURES Low gate charge Trench FS Technology Trench FS RoHS product Ro... See More ⇒
jt075n120f2ma1e.pdf
IGBT IGBT Modules R IGBT JT075N120F2MA1E MAIN CHARACTERISTICS Package IC 75 A 1200 V V CES Vcesat_typ 1.9V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techno... See More ⇒
Specs: JT05N065RAD, JT05N065VAD, JT05N065SAD, JT05N065RED, JT05N065SED, JT05N065FED, JT05N065CED, JT075K120F2MA1E, SGP30N60, JT075N120F2MA1E, JT075N120GPED, JT100K120F2MA1E, JT150N120F2MA1E, JT450N120F2MH1E, JT450N120F2MHTE, JT600N065F2MH1E, JT600N120F2MH1E
Keywords - JT075N065GHED transistor spec
JT075N065GHED cross reference
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History: SGS6N60UF | AIKB20N60CT | SGS23N60UFD
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