JT100K120F2MA1E Specs and Replacement
Type Designator: JT100K120F2MA1E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 517 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 100 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
tr ⓘ - Rise Time, typ: 70 nS
Coesⓘ - Output Capacitance, typ: 700 pF
Package: MODULE JT100K120F2MA1E Substitution - IGBT ⓘ Cross-Reference Search
JT100K120F2MA1E datasheet
jt100k120f2ma1e.pdf
IGBT IGBT Modules R IGBT JT100K120F2MA1E MAIN CHARACTERISTICS Package IC 100 A 1200 V V CES Vcesat_typ 1.9V Vge=15V APPLICATIONS UPS UPS System Welding FEATURES FS Technology FS Low saturation voltage ... See More ⇒
Specs: JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , SGT60U65FD1PT , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA .
History: CY20AAJ-8H | AIGW50N65F5 | F3L200R07PE4 | GT50J328 | STGW30V60F | RJH30H1DPP-M0 | IXST24N60BD1
Keywords - JT100K120F2MA1E transistor spec
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JT100K120F2MA1E replacement
History: CY20AAJ-8H | AIGW50N65F5 | F3L200R07PE4 | GT50J328 | STGW30V60F | RJH30H1DPP-M0 | IXST24N60BD1
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