All IGBT. JT100K120F2MA1E Datasheet

 

JT100K120F2MA1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT100K120F2MA1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 517
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 100
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.9
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 70
   Collector Capacity (Cc), typ, pF: 700
   Total Gate Charge (Qg), typ, nC: 450
   Package: MODULE

 JT100K120F2MA1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT100K120F2MA1E Datasheet (PDF)

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 jt100k120f2ma1e.pdf

JT100K120F2MA1E JT100K120F2MA1E

IGBT IGBT Modules RIGBT JT100K120F2MA1E MAIN CHARACTERISTICS Package IC 100 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS UPS UPS System Welding FEATURES FS Technology FS Low saturation voltage:

Datasheet: JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , IRG7S313U , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA .

 

 
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