All IGBT. JT100K120F2MA1E Datasheet

 

JT100K120F2MA1E Datasheet and Replacement


   Type Designator: JT100K120F2MA1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 517 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 100 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.9 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 70 nS
   Coesⓘ - Output Capacitance, typ: 700 pF
   Qg ⓘ - Total Gate Charge, typ: 450 nC
   Package: MODULE
 

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JT100K120F2MA1E Datasheet (PDF)

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JT100K120F2MA1E

IGBT IGBT Modules RIGBT JT100K120F2MA1E MAIN CHARACTERISTICS Package IC 100 A 1200 V V CESVcesat_typ1.9V Vge=15V APPLICATIONS UPS UPS System Welding FEATURES FS Technology FS Low saturation voltage:

Datasheet: JT05N065RED , JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , IKW50N60H3 , JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA .

History: DM2G400SH6A | F4-100R06KL4

Keywords - JT100K120F2MA1E transistor datasheet

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