All IGBT. JT150N120F2MA1E Datasheet

 

JT150N120F2MA1E Datasheet and Replacement


   Type Designator: JT150N120F2MA1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 257 nS
   Coesⓘ - Output Capacitance, typ: 800 pF
   Qg ⓘ - Total Gate Charge, typ: 650 nC
   Package: MODULE
 

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JT150N120F2MA1E Datasheet (PDF)

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JT150N120F2MA1E

IGBT IGBT Modules RIGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , IKW30N60H3 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: ISL9V3040S3S | CM150RX-12A | CM150RL-24NF | DGTD65T15H2TF | BT25T120CKR | IXYX100N120C3

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