JT150N120F2MA1E PDF and Equivalents Search

 

JT150N120F2MA1E Specs and Replacement

Type Designator: JT150N120F2MA1E

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 750 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 150 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃

tr ⓘ - Rise Time, typ: 257 nS

Coesⓘ - Output Capacitance, typ: 800 pF

Package: MODULE

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JT150N120F2MA1E datasheet

 0.1. Size:916K  jilin sino
 jt150n120f2ma1e.pdf pdf_icon

JT150N120F2MA1E

IGBT IGBT Modules R IGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CES Vcesat_typ 1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn... See More ⇒

Specs: JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , IRG4PC50U , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ .

History: ISL9V5045S3ST-F085 | HIA30N140IH-DA

Keywords - JT150N120F2MA1E transistor spec

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