All IGBT. JT150N120F2MA1E Datasheet

 

JT150N120F2MA1E Datasheet and Replacement


   Type Designator: JT150N120F2MA1E
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 257 nS
   Coesⓘ - Output Capacitance, typ: 800 pF
   Package: MODULE
 

 JT150N120F2MA1E substitution

   - IGBT ⓘ Cross-Reference Search

 

JT150N120F2MA1E Datasheet (PDF)

 0.1. Size:916K  jilin sino
 jt150n120f2ma1e.pdf pdf_icon

JT150N120F2MA1E

IGBT IGBT Modules RIGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn

Datasheet: JT05N065SED , JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , SGP30N60 , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ .

Keywords - JT150N120F2MA1E transistor datasheet

 JT150N120F2MA1E cross reference
 JT150N120F2MA1E equivalent finder
 JT150N120F2MA1E lookup
 JT150N120F2MA1E substitution
 JT150N120F2MA1E replacement

 

 
Back to Top

 


 
.