All IGBT. JT150N120F2MA1E Datasheet

 

JT150N120F2MA1E Datasheet and Replacement


   Type Designator: JT150N120F2MA1E
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 750 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 150 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 257 nS
   Coesⓘ - Output Capacitance, typ: 800 pF
   Package: MODULE
      - IGBT Cross-Reference

 

JT150N120F2MA1E Datasheet (PDF)

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JT150N120F2MA1E

IGBT IGBT Modules RIGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

History: SPT40N120F1AT8TL | IXBP5N160G | BLG15T65FUL-P | APT20GF120BRDQ1G | 2MBI200NB-120 | BM63763S-VC | FD400R33KF2C

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