All IGBT. JT150N120F2MA1E Datasheet

 

JT150N120F2MA1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT150N120F2MA1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 750
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 150
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 257
   Collector Capacity (Cc), typ, pF: 800
   Total Gate Charge (Qg), typ, nC: 650
   Package: MODULE

 JT150N120F2MA1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT150N120F2MA1E Datasheet (PDF)

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 jt150n120f2ma1e.pdf

JT150N120F2MA1E JT150N120F2MA1E

IGBT IGBT Modules RIGBT JT150N120F2MA1E MAIN CHARACTERISTICS Package IC 150 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS High Power Converters Motor Drives UPS UPS System FEATURES FS Techn

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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