All IGBT. JT450N120F2MH1E Datasheet

 

JT450N120F2MH1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT450N120F2MH1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 2250
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 450
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 66
   Collector Capacity (Cc), typ, pF: 2100
   Total Gate Charge (Qg), typ, nC: 3100
   Package: MODULE

 JT450N120F2MH1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT450N120F2MH1E Datasheet (PDF)

 0.1. Size:1210K  jilin sino
 jt450n120f2mh1e.pdf

JT450N120F2MH1E JT450N120F2MH1E

N N-CHANNEL IGBT RIGBT JT450N120F2MH1E MAIN CHARACTERISTICS Package IC 450 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

 1.1. Size:1152K  jilin sino
 jt450n120f2mhte.pdf

JT450N120F2MH1E JT450N120F2MH1E

N N-CHANNEL IGBT RIGBT JT450N120F2MHTE MAIN CHARACTERISTICS Package IC 450 A 1200 V V CESVcesat_typ1.8V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

Datasheet: JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , IRG4PF50WD , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI .

 

 
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