JT450N120F2MH1E Specs and Replacement
Type Designator: JT450N120F2MH1E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 2250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 450 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 66 nS
Coesⓘ - Output Capacitance, typ: 2100 pF
Package: MODULE JT450N120F2MH1E Substitution - IGBT ⓘ Cross-Reference Search
JT450N120F2MH1E datasheet
Specs: JT05N065FED , JT05N065CED , JT075K120F2MA1E , JT075N065GHED , JT075N120F2MA1E , JT075N120GPED , JT100K120F2MA1E , JT150N120F2MA1E , RJH60F7BDPQ-A0 , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI .
History: ISL9V5045S3ST-F085 | HIA30N140IH-DA
Keywords - JT450N120F2MH1E transistor spec
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History: ISL9V5045S3ST-F085 | HIA30N140IH-DA
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