All IGBT. JT600N120F2MH1E Datasheet

 

JT600N120F2MH1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT600N120F2MH1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 3650 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 600 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.95 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.3 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 82 nS
   Coesⓘ - Output Capacitance, typ: 3700 pF
   Qgⓘ - Total Gate Charge, typ: 4000 nC
   Package: MODULE

 JT600N120F2MH1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT600N120F2MH1E Datasheet (PDF)

 0.1. Size:499K  jilin sino
 jt600n120f2mh1e.pdf

JT600N120F2MH1E JT600N120F2MH1E

N N-CHANNEL IGBT RIGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

 1.1. Size:1156K  jilin sino
 jt600n120f2mhte.pdf

JT600N120F2MH1E JT600N120F2MH1E

N N-CHANNEL IGBT RIGBT JT600N120F2MHTE MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

 8.1. Size:1205K  jilin sino
 jt600n065f2mh1e.pdf

JT600N120F2MH1E JT600N120F2MH1E

N N-CHANNEL IGBT RIGBT JT600N065F2MH1E MAIN CHARACTERISTICS Package IC 600 A 650 V V CESVcesat_typ1.55V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
Back to Top