All IGBT. JT600N120F2MH1E Datasheet

 

JT600N120F2MH1E IGBT. Datasheet pdf. Equivalent


   Type Designator: JT600N120F2MH1E
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 3650
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 600
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.95
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.3
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 82
   Collector Capacity (Cc), typ, pF: 3700
   Total Gate Charge (Qg), typ, nC: 4000
   Package: MODULE

 JT600N120F2MH1E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

JT600N120F2MH1E Datasheet (PDF)

 0.1. Size:499K  jilin sino
 jt600n120f2mh1e.pdf

JT600N120F2MH1E JT600N120F2MH1E

N N-CHANNEL IGBT RIGBT JT600N120F2MH1E MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

 1.1. Size:1156K  jilin sino
 jt600n120f2mhte.pdf

JT600N120F2MH1E JT600N120F2MH1E

N N-CHANNEL IGBT RIGBT JT600N120F2MHTE MAIN CHARACTERISTICS Package IC 600 A 1200 V V CESVcesat_typ1.95V Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

 8.1. Size:1205K  jilin sino
 jt600n065f2mh1e.pdf

JT600N120F2MH1E JT600N120F2MH1E

N N-CHANNEL IGBT RIGBT JT600N065F2MH1E MAIN CHARACTERISTICS Package IC 600 A 650 V V CESVcesat_typ1.55V @Vge=15V APPLICATIONS Motor Drives Servo Drives UPS System UPS Wind Turbines FEATURES

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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