All IGBT. TT010N060EQ Datasheet

 

TT010N060EQ Datasheet and Replacement


   Type Designator: TT010N060EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 82 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 12 nS
   Coesⓘ - Output Capacitance, typ: 40 pF
   Qgⓘ - Total Gate Charge, typ: 16 nC
   Package: DPAK
      - IGBT Cross-Reference

 

TT010N060EQ Datasheet (PDF)

 ..1. Size:1017K  jilin sino
 tt010n060eq.pdf pdf_icon

TT010N060EQ

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren

 8.1. Size:550K  jilin sino
 tt010n120ei.pdf pdf_icon

TT010N060EQ

N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 8.2. Size:1472K  jilin sino
 tt010n120eq.pdf pdf_icon

TT010N060EQ

N N-CHANNEL IGBT R TT010N120EQ MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

Datasheet: JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , IHW40T60 , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ .

History: IXGR32N170AH1

Keywords - TT010N060EQ transistor datasheet

 TT010N060EQ cross reference
 TT010N060EQ equivalent finder
 TT010N060EQ lookup
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 TT010N060EQ replacement

 

 
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