All IGBT. TT010N060EQ Datasheet

 

TT010N060EQ IGBT. Datasheet pdf. Equivalent


   Type Designator: TT010N060EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 82
   Maximum Collector-Emitter Voltage |Vce|, V: 600
   Maximum Gate-Emitter Voltage |Vge|, V: 25
   Maximum Collector Current |Ic| @25℃, A: 10
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.8
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.5
   Maximum Junction Temperature (Tj), ℃: 150
   Rise Time (tr), typ, nS: 12
   Collector Capacity (Cc), typ, pF: 40
   Total Gate Charge (Qg), typ, nC: 16
   Package: DPAK

 TT010N060EQ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TT010N060EQ Datasheet (PDF)

 ..1. Size:1017K  jilin sino
 tt010n060eq.pdf

TT010N060EQ TT010N060EQ

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren

 8.1. Size:550K  jilin sino
 tt010n120ei.pdf

TT010N060EQ TT010N060EQ

N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 8.2. Size:1472K  jilin sino
 tt010n120eq.pdf

TT010N060EQ TT010N060EQ

N N-CHANNEL IGBT R TT010N120EQ MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , SGT40N60FD2PN , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

 

 
Back to Top