TT010N060EQ Specs and Replacement
Type Designator: TT010N060EQ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 82 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 25 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 12 nS
Coesⓘ - Output Capacitance, typ: 40 pF
Package: DPAK
TT010N060EQ Substitution - IGBT ⓘ Cross-Reference Search
TT010N060EQ datasheet
tt010n060eq.pdf
N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15V APPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren... See More ⇒
Specs: JT150N120F2MA1E , JT450N120F2MH1E , JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TGAN20N135FD , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ .
History: NGTG15N120FL2 | RJH60D7BDPQ-E0 | NGTB30N60FLWG | XP15PJS120CL1B1 | T1200TB25A | TGAN40N65F2DS | TGAN80N60F2DS
Keywords - TT010N060EQ transistor spec
TT010N060EQ cross reference
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History: NGTG15N120FL2 | RJH60D7BDPQ-E0 | NGTB30N60FLWG | XP15PJS120CL1B1 | T1200TB25A | TGAN40N65F2DS | TGAN80N60F2DS
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