All IGBT. TT010N120EQ Datasheet

 

TT010N120EQ IGBT. Datasheet pdf. Equivalent


   Type Designator: TT010N120EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 176 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 18.7 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO-247

 TT010N120EQ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TT010N120EQ Datasheet (PDF)

 ..1. Size:1472K  jilin sino
 tt010n120eq.pdf

TT010N120EQ TT010N120EQ

N N-CHANNEL IGBT R TT010N120EQ MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 4.1. Size:550K  jilin sino
 tt010n120ei.pdf

TT010N120EQ TT010N120EQ

N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 8.1. Size:1017K  jilin sino
 tt010n060eq.pdf

TT010N120EQ TT010N120EQ

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren

Datasheet: JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , MBQ50T65FESC , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI , TT030U065FBA .

 

 
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