All IGBT. TT010N120EQ Datasheet

 

TT010N120EQ Datasheet and Replacement


   Type Designator: TT010N120EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 176 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 18.7 nS
   Coesⓘ - Output Capacitance, typ: 60 pF
   Qgⓘ - Total Gate Charge, typ: 80 nC
   Package: TO-247
      - IGBT Cross-Reference

 

TT010N120EQ Datasheet (PDF)

 ..1. Size:1472K  jilin sino
 tt010n120eq.pdf pdf_icon

TT010N120EQ

N N-CHANNEL IGBT R TT010N120EQ MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 4.1. Size:550K  jilin sino
 tt010n120ei.pdf pdf_icon

TT010N120EQ

N N-CHANNEL IGBT R TT010N120EI MAIN CHARACTERISTICS Package IC 10 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverters TO-247 FEATURES Low gate charge Trench FS Trench FS Technology RoHS

 8.1. Size:1017K  jilin sino
 tt010n060eq.pdf pdf_icon

TT010N120EQ

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren

Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .

Keywords - TT010N120EQ transistor datasheet

 TT010N120EQ cross reference
 TT010N120EQ equivalent finder
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 TT010N120EQ replacement

 

 
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