TT010N120EQ PDF and Equivalents Search

 

TT010N120EQ Specs and Replacement

Type Designator: TT010N120EQ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 176 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 10 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 18.7 nS

Coesⓘ - Output Capacitance, typ: 60 pF

Package: TO-247

 TT010N120EQ Substitution

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TT010N120EQ datasheet

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 tt010n120eq.pdf pdf_icon

TT010N120EQ

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 tt010n120ei.pdf pdf_icon

TT010N120EQ

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 tt010n060eq.pdf pdf_icon

TT010N120EQ

N N-CHANNEL IGBT R TT010N060EQ MAIN CHARACTERISTICS Package IC 10A VCES 600V Vcesat-typ 1.8V Vge=15V APPLICATIONS General purpose inverters UPS UPS C FEATURES E Low gate charge Tren... See More ⇒

Specs: JT450N120F2MHTE , JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , IRG4PC50W , TT015N060EQ , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI , TT030U065FBA .

History: XD025H120CX1 | RJH60D7BDPQ-E0 | TGAN40N65F2DS | NGTG15N120FL2 | T1200TB25A | TGAN80N60F2DS | XP15PJS120CL1B1

Keywords - TT010N120EQ transistor spec

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