TT015N060EQ IGBT. Datasheet pdf. Equivalent
Type Designator: TT015N060EQ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 36.7 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 64 pF
Qgⓘ - Total Gate Charge, typ: 24.8 nC
Package: TO-220MF
TT015N060EQ Transistor Equivalent Substitute - IGBT Cross-Reference Search
TT015N060EQ Datasheet (PDF)
tt015n060eq.pdf
N N-CHANNEL IGBT R TT015N060EQ MAIN CHARACTERISTICS Package IC 15 A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters Motor Control FEATURES Low gate charge Trench FS , Trench FS Tec
tt015n120eq.pdf
N N-CHANNEL IGBT RTT015N120EQ MAIN CHARACTERISTICS Package 15A IC 1200V VCES 1.60V VCESAT-TYP APPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS product
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
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