TT015N060EQ Datasheet and Replacement
Type Designator: TT015N060EQ
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 36.7 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 64 pF
Package: TO-220MF
- IGBT Cross-Reference
TT015N060EQ Datasheet (PDF)
tt015n060eq.pdf

N N-CHANNEL IGBT R TT015N060EQ MAIN CHARACTERISTICS Package IC 15 A VCES 600V Vcesat-typ 1.8V Vge=15VAPPLICATIONS General purpose inverters Motor Control FEATURES Low gate charge Trench FS , Trench FS Tec
tt015n120eq.pdf

N N-CHANNEL IGBT RTT015N120EQ MAIN CHARACTERISTICS Package 15A IC 1200V VCES 1.60V VCESAT-TYP APPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS product
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MMG75J120U6HN | 2SH29
Keywords - TT015N060EQ transistor datasheet
TT015N060EQ cross reference
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TT015N060EQ lookup
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History: MMG75J120U6HN | 2SH29



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