TT015N060EQ Specs and Replacement
Type Designator: TT015N060EQ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 36.7 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 600 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 15 A @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.8 V @25℃
tr ⓘ - Rise Time, typ: 26 nS
Coesⓘ - Output Capacitance, typ: 64 pF
Package: TO-220MF
TT015N060EQ Substitution - IGBT ⓘ Cross-Reference Search
TT015N060EQ datasheet
tt015n060eq.pdf
N N-CHANNEL IGBT R TT015N060EQ MAIN CHARACTERISTICS Package IC 15 A VCES 600V Vcesat-typ 1.8V Vge=15V APPLICATIONS General purpose inverters Motor Control FEATURES Low gate charge Trench FS , Trench FS Tec... See More ⇒
Specs: JT600N065F2MH1E , JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , IHW40T60 , TT015N120EQ , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI , TT030U065FBA , TT030U065FQ .
History: RJH60D3DPP-M0
Keywords - TT015N060EQ transistor spec
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History: RJH60D3DPP-M0
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