TT015N120EQ PDF and Equivalents Search

 

TT015N120EQ Specs and Replacement

Type Designator: TT015N120EQ

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 238 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃

tr ⓘ - Rise Time, typ: 30 nS

Coesⓘ - Output Capacitance, typ: 78 pF

Package: TO-247

 TT015N120EQ Substitution

- IGBT ⓘ Cross-Reference Search

 

TT015N120EQ datasheet

 ..1. Size:1932K  jilin sino
 tt015n120eq.pdf pdf_icon

TT015N120EQ

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 8.1. Size:1060K  jilin sino
 tt015n060eq.pdf pdf_icon

TT015N120EQ

N N-CHANNEL IGBT R TT015N060EQ MAIN CHARACTERISTICS Package IC 15 A VCES 600V Vcesat-typ 1.8V Vge=15V APPLICATIONS General purpose inverters Motor Control FEATURES Low gate charge Trench FS , Trench FS Tec... See More ⇒

Specs: JT600N120F2MH1E , JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , MGD623S , TT025N120EQ , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI , TT030U065FBA , TT030U065FQ , TT040K120EQ .

History: TT040K120EQ | SGW13N60UF

Keywords - TT015N120EQ transistor spec

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