TT025N120EQ Specs and Replacement
Type Designator: TT025N120EQ
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 25 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 42 nS
Coesⓘ - Output Capacitance, typ: 138 pF
Package: TO-247
TT025N120EQ Substitution - IGBT ⓘ Cross-Reference Search
TT025N120EQ datasheet
tt025n120fq.pdf
N N-CHANNEL IGBT R TT025N120FQ MAIN CHARACTERISTICS Package IC 25 A VCES 1200V Vcesat-typ 1.6V Vge=15V APPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS produ... See More ⇒
tt025u120eq.pdf
N N-CHANNEL IGBT R TT025U120EQ MAIN CHARACTERISTICS Package IC 25 A VCES 1200V Vcesat-typ 2.3V Vge=15V APPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology, ... See More ⇒
Specs: JT600N120F2MHTE , TP015N120CA , TP020N120CA , TT010N060EQ , TT010N120EI , TT010N120EQ , TT015N060EQ , TT015N120EQ , IRG4PC50UD , TT025N120FQ , TT025U120EQ , TT030K065EQ , TT030N065EI , TT030U065FBA , TT030U065FQ , TT040K120EQ , TT040U060EQ .
History: SIGC03T60SNC | STGWA40H65FB | VS-GB150LH120N | YGW50N65F1A
Keywords - TT025N120EQ transistor spec
TT025N120EQ cross reference
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History: SIGC03T60SNC | STGWA40H65FB | VS-GB150LH120N | YGW50N65F1A
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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