All IGBT. TT025N120EQ Datasheet

 

TT025N120EQ IGBT. Datasheet pdf. Equivalent


   Type Designator: TT025N120EQ
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Maximum Power Dissipation (Pc), W: 300
   Maximum Collector-Emitter Voltage |Vce|, V: 1200
   Maximum Gate-Emitter Voltage |Vge|, V: 20
   Maximum Collector Current |Ic| @25℃, A: 25
   Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.5
   Maximum G-E Threshold Voltag |VGE(th)|, V: 6.6
   Maximum Junction Temperature (Tj), ℃: 175
   Rise Time (tr), typ, nS: 42
   Collector Capacity (Cc), typ, pF: 138
   Total Gate Charge (Qg), typ, nC: 239
   Package: TO-247

 TT025N120EQ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TT025N120EQ Datasheet (PDF)

 ..1. Size:2026K  jilin sino
 tt025n120eq.pdf

TT025N120EQ TT025N120EQ

N N-CHANNEL IGBT RTT025N120EQ MAIN CHARACTERISTICS Package 25A IC 1200V VCE 1.50V VCESAT-typ APPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS product

 5.1. Size:1318K  jilin sino
 tt025n120fq.pdf

TT025N120EQ TT025N120EQ

N N-CHANNEL IGBT R TT025N120FQ MAIN CHARACTERISTICS Package IC 25 A VCES 1200V Vcesat-typ 1.6V Vge=15VAPPLICATIONS General purpose inverter FEATURES Low gate charge Trench FS Trench FS Technology RoHS RoHS produ

 9.1. Size:1650K  jilin sino
 tt025u120eq.pdf

TT025N120EQ TT025N120EQ

N N-CHANNEL IGBT R TT025U120EQ MAIN CHARACTERISTICS Package IC 25 A VCES 1200V Vcesat-typ 2.3V Vge=15VAPPLICATIONS General purpose inverters UPS UPS FEATURES Low gate charge Trench FS , Trench FS Technology,

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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