TT050K065FQ IGBT. Datasheet pdf. Equivalent
Type Designator: TT050K065FQ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Maximum Power Dissipation (Pc), W: 500
Maximum Collector-Emitter Voltage |Vce|, V: 650
Maximum Gate-Emitter Voltage |Vge|, V: 20
Maximum Collector Current |Ic| @25℃, A: 50
Collector-Emitter saturation Voltage |VCE(sat)|, typ, V: 1.55
Maximum G-E Threshold Voltag |VGE(th)|, V: 5.5
Maximum Junction Temperature (Tj), ℃: 175
Rise Time (tr), typ, nS: 65
Collector Capacity (Cc), typ, pF: 213
Total Gate Charge (Qg), typ, nC: 118
Package: TO-247-4L
TT050K065FQ Transistor Equivalent Substitute - IGBT Cross-Reference Search
TT050K065FQ Datasheet (PDF)
tt050k065fq.pdf
N N-CHANNEL IGBT RTT050K065FQ MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.55V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
att050k065fqc.pdf
N N-CHANNEL IGBT RATT050K065FQC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.35V APPLICATIONS Charging pile UPS UPS Solar converters Energy Storage Built in SiC SBD FEATURES Low gate
tt050u065fbc.pdf
N N-CHANNEL IGBT RTT050U065FBC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.4V APPLICATIONS Charging pile Built in SiC SBD UPS UPS Solar converters Energy Storage FEATURES Low gate c
tt050u065fb.pdf
N N-CHANNEL IGBT RTT050U065FB MAIN CHARACTERISTICS Package IC 50A VCE 650V VCEsat-TYP 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
Datasheet: TT030K065EQ , TT030N065EI , TT030U065FBA , TT030U065FQ , TT040K120EQ , TT040U060EQ , TT040U065FB , TT040U120EQ , YGW40N65F1A1 , TT050U065FB , TT050U065FBC , TT060U060EQ , TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC .
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IGBT: TT100N120PF1E | TT075U065FQB | TT075U065FBC | TT075N120EBC | TT075N065EQ | TT060U065FQ | TT060U065FB | TT060U060EQ | TT050U065FBC | TT050U065FB | TT050K065FQ