All IGBT. TT050K065FQ Datasheet

 

TT050K065FQ IGBT. Datasheet pdf. Equivalent


   Type Designator: TT050K065FQ
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 500 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 65 nS
   Coesⓘ - Output Capacitance, typ: 213 pF
   Package: TO-247-4L

 TT050K065FQ Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

TT050K065FQ Datasheet (PDF)

 ..1. Size:601K  jilin sino
 tt050k065fq.pdf

TT050K065FQ TT050K065FQ

N N-CHANNEL IGBT RTT050K065FQ MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.55V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS

 0.1. Size:1052K  jilin sino
 att050k065fqc.pdf

TT050K065FQ TT050K065FQ

N N-CHANNEL IGBT RATT050K065FQC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.35V APPLICATIONS Charging pile UPS UPS Solar converters Energy Storage Built in SiC SBD FEATURES Low gate

 9.1. Size:1109K  jilin sino
 tt050u065fbc.pdf

TT050K065FQ TT050K065FQ

N N-CHANNEL IGBT RTT050U065FBC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.4V APPLICATIONS Charging pile Built in SiC SBD UPS UPS Solar converters Energy Storage FEATURES Low gate c

 9.2. Size:1230K  jilin sino
 tt050u065fb.pdf

TT050K065FQ TT050K065FQ

N N-CHANNEL IGBT RTT050U065FB MAIN CHARACTERISTICS Package IC 50A VCE 650V VCEsat-TYP 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , CRG60T60AK3HD , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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