TT050K065FQ Datasheet and Replacement
Type Designator: TT050K065FQ
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 500 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 50 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 65 nS
Coesⓘ - Output Capacitance, typ: 213 pF
Qgⓘ - Total Gate Charge, typ: 118 nC
Package: TO-247-4L
- IGBT Cross-Reference
TT050K065FQ Datasheet (PDF)
tt050k065fq.pdf

N N-CHANNEL IGBT RTT050K065FQ MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.55V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
att050k065fqc.pdf

N N-CHANNEL IGBT RATT050K065FQC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.35V APPLICATIONS Charging pile UPS UPS Solar converters Energy Storage Built in SiC SBD FEATURES Low gate
tt050u065fbc.pdf

N N-CHANNEL IGBT RTT050U065FBC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.4V APPLICATIONS Charging pile Built in SiC SBD UPS UPS Solar converters Energy Storage FEATURES Low gate c
tt050u065fb.pdf

N N-CHANNEL IGBT RTT050U065FB MAIN CHARACTERISTICS Package IC 50A VCE 650V VCEsat-TYP 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: APTGT600U170D4 | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | IKW50N65WR5
Keywords - TT050K065FQ transistor datasheet
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History: APTGT600U170D4 | CM1400DU-24NF | CRG15T120BK3SD | JNG75T65HYU2 | IKW50N65WR5



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