TT050K065FQ Datasheet. Specs and Replacement

Type Designator: TT050K065FQ  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 500 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.55 V @25℃

tr ⓘ - Rise Time, typ: 65 nS

Coesⓘ - Output Capacitance, typ: 213 pF

Package: TO-247-4L

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TT050K065FQ datasheet

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TT050K065FQ

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TT050K065FQ

N N-CHANNEL IGBT R ATT050K065FQC MAIN CHARACTERISTICS Package IC 50A VCES 650V Vcesat-typ 1.35V APPLICATIONS Charging pile UPS UPS Solar converters Energy Storage Built in SiC SBD FEATURES Low gate... See More ⇒

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TT050K065FQ

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TT050K065FQ

N N-CHANNEL IGBT R TT050U065FB MAIN CHARACTERISTICS Package IC 50A VCE 650V VCEsat-TYP 1.7V APPLICATIONS Power factor corrector (PFC) PFC Energy Storage FEATURES Low gate charge Trench FS , Trench FS Technology, RoHS ... See More ⇒

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Specs: TT030K065EQ, TT030N065EI, TT030U065FBA, TT030U065FQ, TT040K120EQ, TT040U060EQ, TT040U065FB, TT040U120EQ, SGT60U65FD1PT, TT050U065FB, TT050U065FBC, TT060U060EQ, TT060U065FB, TT060U065FQ, TT075N065EQ, TT075N120EBC, TT075U065FBC

Keywords - TT050K065FQ transistor spec

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