BRG10N120D IGBT. Datasheet pdf. Equivalent
Type Designator: BRG10N120D
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 208 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 20 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 24 nS
Coesⓘ - Output Capacitance, typ: 56.8 pF
Qgⓘ - Total Gate Charge, typ: 63.8 nC
Package: TO3P
BRG10N120D Transistor Equivalent Substitute - IGBT Cross-Reference Search
BRG10N120D Datasheet (PDF)
brg10n120d.pdf
BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Lo
Datasheet: TT060U060EQ , TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , HGTG30N60A4 , BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 .
LIST
Last Update
IGBT: DAZF150G120XCA | DAZF150G120SCA | DAZF100G170XCA | DAZF100G120XCA | DAZF100G120SCA | DAZF075G120XCA | DAZF075G120SCA | DAHF300G120SB | DAHF225G120SB | DAHF200G120SB | DAHF150G120SB