BRG10N120D PDF and Equivalents Search

 

BRG10N120D PDF Specs and Replacement


   Type Designator: BRG10N120D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 208 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃
   tr ⓘ - Rise Time, typ: 24 nS
   Coesⓘ - Output Capacitance, typ: 56.8 pF
   Package: TO3P
 

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BRG10N120D PDF specs

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BRG10N120D

BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Lo... See More ⇒

Specs: TT060U060EQ , TT060U065FB , TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , TGAN40N60FD , BRG60N60D , BRGB6N65DP , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 .

History: CM50YE13-12H | CM600DXL-24S

Keywords - BRG10N120D transistor spec

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