BRG10N120D Datasheet. Specs and Replacement

Type Designator: BRG10N120D  📄📄 

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 208 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 20 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.4 V @25℃

tr ⓘ - Rise Time, typ: 24 nS

Coesⓘ - Output Capacitance, typ: 56.8 pF

Package: TO3P

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BRG10N120D datasheet

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BRG10N120D

BRG10N120D Rev.D Oct.-2015 DATA SHEET / Descriptions TO-3P Insulated-Gate Bipolar Transistor in a TO-3P Plastic Package. / Features Built in fast recovery diode, High reliability and thermal stability parameters, Low switching loss, Lo... See More ⇒

Specs: TT060U060EQ, TT060U065FB, TT060U065FQ, TT075N065EQ, TT075N120EBC, TT075U065FBC, TT075U065FQB, TT100N120PF1E, YGW75N65F1, BRG60N60D, BRGB6N65DP, BRGH15N120D, BRGH25N120D, NCE100ED65BT, NCE100ED65BT4, NCE100ED65VT, NCE100ED65VT4

Keywords - BRG10N120D transistor spec

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