BRGB6N65DP Datasheet and Replacement
Type Designator: BRGB6N65DP
Type: IGBT
Type of IGBT Channel: N
Pc ⓘ - Maximum Power Dissipation: 69 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.73 V @25℃
Tj ⓘ - Maximum Junction Temperature: 150 ℃
tr ⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 36 pF
Package: TO252
BRGB6N65DP substitution
BRGB6N65DP Datasheet (PDF)
brgb6n65dp.pdf
BRGB6N65DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 Insulated-Gate Bipolar Transistor in a TO-252 Plastic Package. / Features di/dt V CE(SAT)
Datasheet: TT060U065FQ , TT075N065EQ , TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , BRG60N60D , FGPF4533 , BRGH15N120D , BRGH25N120D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 .
History: AOK60B60D1 | IKP15N65F5 | BLQG50T65FDLA-W | AOK40B65M3 | APTGS25X120BTP2 | IXSH35N120A | AP28G40GEM-HF
Keywords - BRGB6N65DP transistor datasheet
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History: AOK60B60D1 | IKP15N65F5 | BLQG50T65FDLA-W | AOK40B65M3 | APTGS25X120BTP2 | IXSH35N120A | AP28G40GEM-HF
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE | JJT30N65SY | JJT30N65SS | JJT30N65SE | JJT40N65UH | JJT40N65UE | JJT40N65LE | JJT40N65HE | JJT40N135UE
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