BRGB6N65DP Datasheet and Replacement
Type Designator: BRGB6N65DP
Type: IGBT + Anti-Parallel Diode
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 69 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic|ⓘ - Maximum Collector Current: 12 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.73 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
Tjⓘ - Maximum Junction Temperature: 150 ℃
trⓘ - Rise Time, typ: 21 nS
Coesⓘ - Output Capacitance, typ: 36 pF
Qgⓘ - Total Gate Charge, typ: 10 nC
Package: TO252
BRGB6N65DP Datasheet (PDF)
brgb6n65dp.pdf
BRGB6N65DP Rev.A Aug.-2023 DATA SHEET / Descriptions TO-252 Insulated-Gate Bipolar Transistor in a TO-252 Plastic Package. / Features di/dt V CE(SAT)
Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT30F131 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .
History: NCE40T120VT | FF225R17ME4_B11
Keywords - BRGB6N65DP transistor datasheet
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History: NCE40T120VT | FF225R17ME4_B11
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IGBT: G50T65LBBW | G50T65DS | G40N120D | G25T120D | DHG60T65D | DGF30F65M2 | DGE20F65M2 | DGD06F65M2 | DGC75F65M | DGC75F120M2 | DGC60F65M
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