BRGB6N65DP IGBT. Datasheet pdf. Equivalent

   Type Designator: BRGB6N65DP
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 69 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 12 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.73 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.3(typ) V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 21 nS
   Coesⓘ - Output Capacitance, typ: 36 pF
   Qgⓘ - Total Gate Charge, typ: 10 nC
   Package: TO252

BRGB6N65DP Transistor Equivalent Substitute - IGBT Cross-Reference Search