BRGH25N120D PDF and Equivalents Search

 

BRGH25N120D Specs and Replacement

Type Designator: BRGH25N120D

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 350 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 50 A @25℃

Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃

tr ⓘ - Rise Time, typ: 75 nS

Coesⓘ - Output Capacitance, typ: 120 pF

Package: TO247

 BRGH25N120D Substitution

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BRGH25N120D datasheet

 ..1. Size:1057K  blue-rocket-elect
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BRGH25N120D

BRGH25N120D Rev.A May.-2019 DATA SHEET / Descriptions TO-247 Insulated-Gate Bipolar Transistor in a TO-247 Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications ... See More ⇒

Specs: TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , BRG60N60D , BRGB6N65DP , BRGH15N120D , IRG7S313U , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 .

Keywords - BRGH25N120D transistor spec

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