All IGBT. BRGH25N120D Datasheet

 

BRGH25N120D Datasheet and Replacement


   Type Designator: BRGH25N120D
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 350 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1200 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 50 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.1 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 75 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Package: TO247
 

 BRGH25N120D substitution

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BRGH25N120D Datasheet (PDF)

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BRGH25N120D

BRGH25N120D Rev.A May.-2019 DATA SHEET / Descriptions TO-247 Insulated-Gate Bipolar Transistor in a TO-247 Plastic Package. / Features RoHS Low gate charge,, Low saturation voltage ,Positive temperature coefficient, RoHS product. / Applications

Datasheet: TT075N120EBC , TT075U065FBC , TT075U065FQB , TT100N120PF1E , BRG10N120D , BRG60N60D , BRGB6N65DP , BRGH15N120D , IRGP4062D , NCE100ED65BT , NCE100ED65BT4 , NCE100ED65VT , NCE100ED65VT4 , NCE100ED65VTP , NCE100ED65VTP4 , NCE100ED75VT , NCE100ED75VT4 .

History: APTGS25X120BTP2 | MIXA150R1200VA | AP28G40GEM-HF | IXGP24N60C4 | OST75N65HLMF | IXGQ50N60B4D1 | IQGB400N60I4

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