All IGBT. BLG10T65FUL-D Datasheet

 

BLG10T65FUL-D IGBT. Datasheet pdf. Equivalent


   Type Designator: BLG10T65FUL-D
   Type: IGBT + Anti-Parallel Diode
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.9 V
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 32 pF
   Qgⓘ - Total Gate Charge, typ: 36 nC
   Package: TO-252

 BLG10T65FUL-D Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

BLG10T65FUL-D Datasheet (PDF)

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 blg10t65ful-d.pdf

BLG10T65FUL-D BLG10T65FUL-D

BLG10T65FUL IGBT 1Description Step-Down Converter BLG10T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . This is gsuitable device for PFC UPS and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 10 A

Datasheet: APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W , IRG4MC50U , GT45F122 , AOB10B60D , AOK10B60D , AOT10B60D , NGB8207AB , NGB8207B , AOB15B60D , IRGSL8B60K , AOK15B60D .

 

 
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