All IGBT. BLG10T65FUL-D Datasheet

 

BLG10T65FUL-D Datasheet and Replacement


   Type Designator: BLG10T65FUL-D
   Type: IGBT
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic|ⓘ - Maximum Collector Current: 20 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   Tjⓘ - Maximum Junction Temperature: 150 ℃
   trⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 32 pF
   Package: TO-252
      - IGBT Cross-Reference

 

BLG10T65FUL-D Datasheet (PDF)

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BLG10T65FUL-D

BLG10T65FUL IGBT 1Description Step-Down Converter BLG10T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . This is gsuitable device for PFC UPS and low V CE(sat)applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CESI 10 A

Datasheet: NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , RJP6065DPM , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P .

History: NCE50TD120WW | IXST35N120B | NCE50ED65VT | MSG100D350FHS | VS-GA100TS60SFPBF | MSG20T65HPT1 | MSG40T120FQC

Keywords - BLG10T65FUL-D transistor datasheet

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