BLG10T65FUL-D PDF and Equivalents Search

 

BLG10T65FUL-D Specs and Replacement


   Type Designator: BLG10T65FUL-D
   Type: IGBT
   Type of IGBT Channel: N

Absolute Maximum Ratings


   Pc ⓘ - Maximum Power Dissipation: 83 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 20 A @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃

Electrical Characteristics


   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   tr ⓘ - Rise Time, typ: 8 nS
   Coesⓘ - Output Capacitance, typ: 32 pF
   Package: TO-252
 

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BLG10T65FUL-D datasheet

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BLG10T65FUL-D

BLG10T65FUL IGBT 1 Description Step-Down Converter BLG10T65FUL is obtained by advanced , Trench Field Stop (T-FS) technology which is characteristic with low V , optimized switching CE(sat) performance and low gate charge Q . This is g suitable device for PFC UPS and low V CE(sat) applications. KEY CHARACTERISTICS Parameter Value Unit V 650 V CES I 10 A ... See More ⇒

Specs: NCE75TD120BTP , NCE75TD120BTP4 , NCE75TD120VT , NCE75TD120WT , NCE75TD120WT4 , NCE75TD120WW , NCE80TC65BT , NCE80TD65BT4 , FGPF4533 , BLG15T65FUA-A , BLG15T65FUA-B , BLG15T65FUA-P , BLG15T65FUL-B , BLG15T65FUL-P , BLG15T65FUL-A , BLG20T65FDLA-A , BLG20T65FDLA-P .

Keywords - BLG10T65FUL-D transistor spec

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