All IGBT. IXGP8N100 Datasheet

 

IXGP8N100 Datasheet and Replacement


   Type Designator: IXGP8N100
   Type: IGBT
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 54 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 1000 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 16 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 2.2 V @25℃
   Tj ⓘ - Maximum Junction Temperature: 150 ℃
   tr ⓘ - Rise Time, typ: 30 nS
   Coesⓘ - Output Capacitance, typ: 34 pF
   Package: TO220
 

 IXGP8N100 substitution

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IXGP8N100 Datasheet (PDF)

 ..1. Size:554K  ixys
 ixga8n100 ixgp8n100.pdf pdf_icon

IXGP8N100

IXGA 8N100VCES = 1000 VIGBTIXGP 8N100IC25 = 16 AVCE(sat) = 2.7 VPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C16 AIC90 TC = 90C8 AICM TC = 25C, 1 ms 32 ATO-263 AA (IXGA)SSOA VGE = 15 V,

 ..2. Size:552K  ixys
 ixgp8n100.pdf pdf_icon

IXGP8N100

IXGA 8N100VCES = 1000 VIGBTIXGP 8N100IC25 = 16 AVCE(sat) = 2.7 VPreliminary data sheetSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 1000 VTO-220AB (IXGP)VCGR TJ = 25C to 150C; RGE = 1 M 1000 VVGES Continuous 20 VVGEM Transient 30 VGCEIC25 TC = 25C16 AIC90 TC = 90C8 AICM TC = 25C, 1 ms 32 ATO-263 AA (IXGA)SSOA VGE = 15 V,

Datasheet: IXGP12N60C , IXGP12N60CD1 , IXGP15N100C , IXGP15N120B , IXGP20N100 , IXGP20N60B , IXGP7N60B , IXGP7N60C , FGH40N60UFD , IXGR32N60C , IXGR32N60CD1 , IXGR40N60BD1 , IXGR60N60U1 , IXGT15N120B , IXGT15N120BD1 , IXGT15N120C , IXGT15N120CD1 .

History: YGW25N120T1 | BLQG50T65FCKA-F

Keywords - IXGP8N100 transistor datasheet

 IXGP8N100 cross reference
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