RGT20TM65D Specs and Replacement
Type Designator: RGT20TM65D
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 25 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
|Ic| ⓘ - Maximum Collector Current: 10 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
tr ⓘ - Rise Time, typ: 18 nS
Coesⓘ - Output Capacitance, typ: 25 pF
Package: TO220F
RGT20TM65D Substitution - IGBT ⓘ Cross-Reference Search
RGT20TM65D datasheet
rgt20tm65d.pdf
RGT20TM65D 650V 10A Field Stop Trench IGBT Datasheet lOutline TO-220NFM VCES 650V IC (100 C) 6A VCE(sat) (Typ.) 1.65V PD 25W (1) (2)(3) lInner Circuit lFeatures (2) 1) Low Collector - Emitter Saturation Voltage (1) Gate (2) Collector 2) Low Switching Loss *1 (3) Emitter (1) 3) Short Circuit Withstand Time 5 s *1 Built in FRD 4) Built in Very Fast & Soft Recovery FRD ... See More ⇒
Specs: BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , IRG4PC50U , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF .
Keywords - RGT20TM65D transistor spec
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