All IGBT. RGT20TM65D Datasheet

 

RGT20TM65D Datasheet and Replacement


   Type Designator: RGT20TM65D
   Type: IGBT + Anti-Parallel Diode
   Marking Code: 20TM65D
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 25 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 30 V
   |Ic| ⓘ - Maximum Collector Current: 10 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.65 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 7 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 18 nS
   Coesⓘ - Output Capacitance, typ: 25 pF
   Qg ⓘ - Total Gate Charge, typ: 22 nC
   Package: TO220F
 

 RGT20TM65D substitution

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RGT20TM65D Datasheet (PDF)

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RGT20TM65D

RGT20TM65D650V 10A Field Stop Trench IGBT DatasheetlOutline TO-220NFMVCES650VIC (100C)6AVCE(sat) (Typ.)1.65VPD25W(1) (2)(3)lInner CircuitlFeatures(2)1) Low Collector - Emitter Saturation Voltage(1) Gate(2) Collector2) Low Switching Loss *1(3) Emitter(1)3) Short Circuit Withstand Time 5s*1 Built in FRD4) Built in Very Fast & Soft Recovery FRD

Datasheet: BLQG3040A-D , BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , SGP30N60 , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF .

Keywords - RGT20TM65D transistor datasheet

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