AMPBQ200N75GSFA Specs and Replacement
Type Designator: AMPBQ200N75GSFA
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 1071 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 200 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
tr ⓘ - Rise Time, typ: 109 nS
Coesⓘ - Output Capacitance, typ: 608 pF
Package: TO-247
AMPBQ200N75GSFA Substitution - IGBT ⓘ Cross-Reference Search
AMPBQ200N75GSFA datasheet
ampbq200n75gsfa.pdf
AMPBQ200N75GSFA 750V 200A Trench and Field Stop IGBT Preliminary data Features Applications Easy parallel switching capability due to Motor drives positive temperature coefficient in VCEsat Main inverter Low VCEsat fast switching PTC heater High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package Code AMPBQ200N75GS TO... See More ⇒
Specs: BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , RJH60F7BDPQ-A0 , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF .
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