AMPBQ200N75GSFA Datasheet and Replacement
Type Designator: AMPBQ200N75GSFA
Type: IGBT + Anti-Parallel Diode
Marking Code: AB200N75GSFA
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 1071 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 200 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 109 nS
Coesⓘ - Output Capacitance, typ: 608 pF
Qgⓘ - Total Gate Charge, typ: TBD nC
Package: TO-247
- IGBT Cross-Reference
AMPBQ200N75GSFA Datasheet (PDF)
ampbq200n75gsfa.pdf

AMPBQ200N75GSFA750V 200A Trench and Field Stop IGBTPreliminary dataFeatures Applications Easy parallel switching capability due to Motor drivespositive temperature coefficient in VCEsat Main inverter Low VCEsatfast switching PTC heater High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeAMPBQ200N75GS TO
Datasheet: AP05G120SW-HF , TSG10N120CN , AP05G120NSW-HF , AP20GT60SW , AP20GT60W , CI15T60 , MMIX4B12N300 , NGD8205A , IHW20N135R5 , IXYP8N90C3D1 , APT20GN60BG , APT20GN60KG , APT20GN60SG , AOK20B60D1 , F3L30R06W1E3_B11 , WGW15G120N , WGW15G120W .
History: MPBD10N65EF
Keywords - AMPBQ200N75GSFA transistor datasheet
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AMPBQ200N75GSFA replacement
History: MPBD10N65EF



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