All IGBT. AMPBQ200N75GSFA Datasheet

 

AMPBQ200N75GSFA Datasheet and Replacement


   Type Designator: AMPBQ200N75GSFA
   Type: IGBT + Anti-Parallel Diode
   Marking Code: AB200N75GSFA
   Type of IGBT Channel: N
   Pc ⓘ - Maximum Power Dissipation: 1071 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 750 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic| ⓘ - Maximum Collector Current: 200 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.5 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tj ⓘ - Maximum Junction Temperature: 175 ℃
   tr ⓘ - Rise Time, typ: 109 nS
   Coesⓘ - Output Capacitance, typ: 608 pF
   Qg ⓘ - Total Gate Charge, typ: TBD nC
   Package: TO-247
 

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AMPBQ200N75GSFA Datasheet (PDF)

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AMPBQ200N75GSFA

AMPBQ200N75GSFA750V 200A Trench and Field Stop IGBTPreliminary dataFeatures Applications Easy parallel switching capability due to Motor drivespositive temperature coefficient in VCEsat Main inverter Low VCEsatfast switching PTC heater High ruggedness, good thermal stability Very tight parameter distributionType Marking Package CodeAMPBQ200N75GS TO

Datasheet: BLQG3040A-B , BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , STGB10NB37LZ , AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF .

History: STGB20M65DF2 | BLG60T65FDL-F | NGTB40N120S | NGTB40N120FL2 | VS-GP300TD60S | TIG052TS | IXGN200N60B3

Keywords - AMPBQ200N75GSFA transistor datasheet

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