AMPBW50N65E Specs and Replacement
Type Designator: AMPBW50N65E
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 130 pF
Package: TO247
AMPBW50N65E Substitution - IGBT ⓘ Cross-Reference Search
AMPBW50N65E datasheet
ampbw50n65e.pdf
AMPBW50N65E 650V-50A Trench and Field Stop IGBT Features Applications Automotive AEC-Q101 qualified UPS Easy parallel switching capability due to PFC positive temperature coefficient in VCEsat PTC Heater Low VCEsat fast switching Climate Compressor High ruggedness, good thermal stability Very tight parameter distribution Type Marking Package ... See More ⇒
Specs: BLQG3040-D , BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , GT30F131 , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF .
Keywords - AMPBW50N65E transistor spec
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