All IGBT. AMPBW50N65E Datasheet

 

AMPBW50N65E IGBT. Datasheet pdf. Equivalent


   Type Designator: AMPBW50N65E
   Type: IGBT + Anti-Parallel Diode
   Marking Code: AMP50N65E
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 130 pF
   Qgⓘ - Total Gate Charge, typ: 230 nC
   Package: TO247

 AMPBW50N65E Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AMPBW50N65E Datasheet (PDF)

 ..1. Size:1012K  cn marching-power
 ampbw50n65e.pdf

AMPBW50N65E AMPBW50N65E

AMPBW50N65E650V-50A Trench and Field Stop IGBTFeaturesApplications Automotive AEC-Q101 qualified UPS Easy parallel switching capability due to PFCpositive temperature coefficient in VCEsat PTC Heater Low VCEsatfast switching Climate Compressor High ruggedness, good thermal stability Very tight parameter distributionType Marking Package

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