AMPBZ50N65ED Specs and Replacement
Type Designator: AMPBZ50N65ED
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 300 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 80 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
tr ⓘ - Rise Time, typ: 62 nS
Coesⓘ - Output Capacitance, typ: 148 pF
Package: TO-247-4
AMPBZ50N65ED Substitution - IGBT ⓘ Cross-Reference Search
AMPBZ50N65ED datasheet
ampbz50n65ed.pdf
AMPBZ50N65ED 650V-50A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution Type Marking Package Code AMPBZ50N65ED AMP50N65ED TO-2... See More ⇒
Specs: BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , IKW30N60H3 , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF .
Keywords - AMPBZ50N65ED transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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