All IGBT. AMPBZ50N65ED Datasheet

 

AMPBZ50N65ED IGBT. Datasheet pdf. Equivalent


   Type Designator: AMPBZ50N65ED
   Type: IGBT + Anti-Parallel Diode
   Marking Code: AMP50N65ED
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 300 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 80 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.6 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 62 nS
   Coesⓘ - Output Capacitance, typ: 148 pF
   Qgⓘ - Total Gate Charge, typ: 230 nC
   Package: TO-247-4

 AMPBZ50N65ED Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

AMPBZ50N65ED Datasheet (PDF)

 ..1. Size:1073K  cn marching-power
 ampbz50n65ed.pdf

AMPBZ50N65ED AMPBZ50N65ED

AMPBZ50N65ED650V-50A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionType Marking Package CodeAMPBZ50N65ED AMP50N65ED TO-2

Datasheet: BLQG3040-B , BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , IKW50N60T , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF .

 

 
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