All IGBT. MPBC40N65EH Datasheet

 

MPBC40N65EH IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBC40N65EH
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP40N65EH
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 250 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 75 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 5.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 55 nS
   Coesⓘ - Output Capacitance, typ: 120 pF
   Qgⓘ - Total Gate Charge, typ: 110 nC
   Package: TO-263

 MPBC40N65EH Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBC40N65EH Datasheet (PDF)

 ..1. Size:890K  cn marching-power
 mpbc40n65eh.pdf

MPBC40N65EH MPBC40N65EH

MPBC40N65EH650V-40A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to UPSpositive temperature coefficient in VCEsat PFC Low VCEsatfast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distributionCType Marking Package CodeMPBC40N65EH MP40N65EH TO-2

Datasheet: BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , TGPF30N43P , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF .

 

 
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