MPBC40N65EH Specs and Replacement
Type Designator: MPBC40N65EH
Type: IGBT
Type of IGBT Channel: N
Absolute Maximum Ratings
Pc ⓘ - Maximum Power Dissipation: 250 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic| ⓘ - Maximum Collector Current: 75 A @25℃
Tj ⓘ - Maximum Junction Temperature: 175 ℃
Electrical Characteristics
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
tr ⓘ - Rise Time, typ: 55 nS
Coesⓘ - Output Capacitance, typ: 120 pF
Package: TO-263
MPBC40N65EH Substitution - IGBT ⓘ Cross-Reference Search
MPBC40N65EH datasheet
mpbc40n65eh.pdf
MPBC40N65EH 650V-40A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to UPS positive temperature coefficient in VCEsat PFC Low VCEsat fast switching PTC Heater High ruggedness, good thermal stability Climate Compressor Very tight parameter distribution C Type Marking Package Code MPBC40N65EH MP40N65EH TO-2... See More ⇒
Specs: BLQG50T65FCKA-F , BLQG50T65FDLA-F , BLQG50T65FDLA-K , BLQG50T65FDLA-W , RGT20TM65D , AMPBQ200N75GSFA , AMPBW50N65E , AMPBZ50N65ED , CRG75T60AK3HD , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF .
Keywords - MPBC40N65EH transistor spec
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IGBT: JJT40N120SE | JJT40N120HE | JJT30N65UE
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