MPBD10N65EF PDF and Equivalents Search

 

MPBD10N65EF Specs and Replacement

Type Designator: MPBD10N65EF

Type: IGBT

Type of IGBT Channel: N

Absolute Maximum Ratings

Pc ⓘ - Maximum Power Dissipation: 68 W

|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V

|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V

|Ic| ⓘ - Maximum Collector Current: 15 A @25℃

Tj ⓘ - Maximum Junction Temperature: 175 ℃

Electrical Characteristics

|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃

tr ⓘ - Rise Time, typ: 28 nS

Coesⓘ - Output Capacitance, typ: 45 pF

Package: TO-252

 MPBD10N65EF Substitution

- IGBT ⓘ Cross-Reference Search

 

MPBD10N65EF datasheet

 ..1. Size:843K  cn marching-power
 mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf pdf_icon

MPBD10N65EF

MPBX10N65EF 650V-10A Trench and Field Stop IGBT Features Applications Easy parallel switching capability due to Motor Drives positive temperature coefficient in VCEsat Low VCEsat fast switching High ruggedness, good thermal stability Very tight parameter distribution G C E TO-220 Type Marking Package Code MPBP10N65EF MP10N65EF TO-220-3 MPBA10N65EF MP10N65EF... See More ⇒

Specs: AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , IRG4PC50W , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF .

Keywords - MPBD10N65EF transistor spec

 MPBD10N65EF cross reference
 MPBD10N65EF equivalent finder
 MPBD10N65EF lookup
 MPBD10N65EF substitution
 MPBD10N65EF replacement

 

 

 

 

↑ Back to Top
.