MPBD10N65EF IGBT. Datasheet pdf. Equivalent
Type Designator: MPBD10N65EF
Type: IGBT + Anti-Parallel Diode
Marking Code: MP10N65EF
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 68 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 15 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
|VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 28 nS
Coesⓘ - Output Capacitance, typ: 45 pF
Qgⓘ - Total Gate Charge, typ: 58 nC
Package: TO-252
MPBD10N65EF Transistor Equivalent Substitute - IGBT Cross-Reference Search
MPBD10N65EF Datasheet (PDF)
mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf
MPBX10N65EF650V-10A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCE TO-220Type Marking Package CodeMPBP10N65EF MP10N65EF TO-220-3MPBA10N65EF MP10N65EF
Datasheet: AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MBQ50T65FESC , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF .
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