All IGBT. MPBD10N65EF Datasheet

 

MPBD10N65EF IGBT. Datasheet pdf. Equivalent


   Type Designator: MPBD10N65EF
   Type: IGBT + Anti-Parallel Diode
   Marking Code: MP10N65EF
   Type of IGBT Channel: N
   Pcⓘ - Maximum Power Dissipation: 68 W
   |Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
   |Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
   |Ic|ⓘ - Maximum Collector Current: 15 A @25℃
   |VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.4 V @25℃
   |VGEth|ⓘ - Maximum G-E Threshold Voltag: 6.5 V
   Tjⓘ - Maximum Junction Temperature: 175 ℃
   trⓘ - Rise Time, typ: 28 nS
   Coesⓘ - Output Capacitance, typ: 45 pF
   Qgⓘ - Total Gate Charge, typ: 58 nC
   Package: TO-252

 MPBD10N65EF Transistor Equivalent Substitute - IGBT Cross-Reference Search

 

MPBD10N65EF Datasheet (PDF)

 ..1. Size:843K  cn marching-power
 mpbp10n65ef mpba10n65ef mpbd10n65ef.pdf

MPBD10N65EF MPBD10N65EF

MPBX10N65EF650V-10A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCE TO-220Type Marking Package CodeMPBP10N65EF MP10N65EF TO-220-3MPBA10N65EF MP10N65EF

Datasheet: AMPBW50N65E , AMPBZ50N65ED , MPBC40N65EH , MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , TGAN40N60F2DS , MPBP15N65EF , MPBA15N65EF , MPBC15N65EF , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF .

 

 
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