MPBC15N65EF Datasheet and Replacement
Type Designator: MPBC15N65EF
Type: IGBT
Type of IGBT Channel: N
Pcⓘ - Maximum Power Dissipation: 107 W
|Vce|ⓘ - Maximum Collector-Emitter Voltage: 650 V
|Vge|ⓘ - Maximum Gate-Emitter Voltage: 20 V
|Ic|ⓘ - Maximum Collector Current: 30 A @25℃
|VCEsat|ⓘ - Collector-Emitter saturation Voltage, typ: 1.45 V @25℃
Tjⓘ - Maximum Junction Temperature: 175 ℃
trⓘ - Rise Time, typ: 35 nS
Coesⓘ - Output Capacitance, typ: 69 pF
Package: TO-263
- IGBT Cross-Reference
MPBC15N65EF Datasheet (PDF)
mpbp15n65ef mpba15n65ef mpbc15n65ef.pdf
MPBX15N65EF650V-15A Trench and Field Stop IGBTFeaturesApplications Easy parallel switching capability due to Motor Drivespositive temperature coefficient in VCEsat Low VCEsatfast switching High ruggedness, good thermal stability Very tight parameter distributionGCTO-220EType Marking Package CodeCMPBP15N65EF MP15N65EF TO-220-3MPBA15N65EF MP15N
Datasheet: MPBD6N65ESF , MPBC6N65ESF , MPBL75N120BF , MPBP10N65EF , MPBA10N65EF , MPBD10N65EF , MPBP15N65EF , MPBA15N65EF , IRG4PC50UD , MPBP20N65EF , MPBA20N65EF , MPBC20N65EF , MPBW20N65EF , MPBT20N65EF , MPBP40N65EH , MPBQ100N120E , MPBQ120N65GSF .
History: AOTF15B65MQ1
Keywords - MPBC15N65EF transistor datasheet
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History: AOTF15B65MQ1
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